Abstract:Inverted near-infrared (NIR) organic photodetectors (OPDs) are required to combine the OPDs with an n-channel silicon-based integrated circuit. NIR absorption in the 930-960 nm range is important because the intensity of solar irradiation is low in this wavelength regime. Here, we controlled the crystallinity of lead(II) phthalocyanine (PbPc) in a PbPc:C blend film to obtain NIR absorption. To form a triclinic phase responsible for NIR light absorption, a substrate was heated during fabrication and C was used … Show more
“…It can be found that both the planar heterojunction and mixed active layers show two absorption bands at 730 and 900 nm in the NIR region, which can be assigned to the monoclinic and triclinic phase absorptions of PbPc, respectively. [15][16][17][18][19] The PbPc (60 nm)/C 60 (40 nm) planar heterojunction layer displays the highest triclinic phase absorption, while a lower ones for the PbPc (20 nm)/PbPc:C 60 (80 nm) mixed active layers, which is attributed to the decreased component of PbPc in the mixed active films. This trend is reverse to the EQE spectra of the devices shown in Figure 2, where the device with a 1:1 mixed active layer appears the highest response at the triclinic phase absorption region.…”
Section: Resultsmentioning
confidence: 96%
“…Among these compounds, lead phthalocyanine (PbPc) has been used for NIR photovoltaic devices owing to its small bandgap with an absorption band extended to about 1000 nm as well as a high extinct coefficient. [15][16][17] In this study, photomultiplication type NIR-OPDs are demonstrated both in PbPc/C 60 heterojunction and PbPc: C 60 mixed active layer devices. Compared with the planar heterojunction device, the mixed active layer devices exhibits a higher NIR response.…”
Photomultiplication type near-infrared (NIR) organic photodetectors (OPDs) are constructed with lead phthalocyanine (PbPc) and C 60 acted as the donor and acceptor, respectively. Compared with the PbPc/C 60 planar heterojunction device, the PbPc:C 60 mixed active layer devices show enhanced NIR responses. The optimized mixed active layer device displays an external quantum efficiency (EQE) of 22.8% at 870 nm under zero bias, which is about 45% higher than that of planar heterojunction device. Moreover, it also presents a detectivity in the order of 10 12 Jones and an EQE of 400% under applied bias of −8 V, indicating a photocurrent gain obtained in the device. Although the mixed active layer devices have a lower absorption in the NIR region, the donor: acceptor mixed structure increases the donor/acceptor contact area and forms continuous carrier transport paths, which increases the excitons dissociation efficiency and the photogenerated carriers collection efficiency and hence the response of the devices.
“…It can be found that both the planar heterojunction and mixed active layers show two absorption bands at 730 and 900 nm in the NIR region, which can be assigned to the monoclinic and triclinic phase absorptions of PbPc, respectively. [15][16][17][18][19] The PbPc (60 nm)/C 60 (40 nm) planar heterojunction layer displays the highest triclinic phase absorption, while a lower ones for the PbPc (20 nm)/PbPc:C 60 (80 nm) mixed active layers, which is attributed to the decreased component of PbPc in the mixed active films. This trend is reverse to the EQE spectra of the devices shown in Figure 2, where the device with a 1:1 mixed active layer appears the highest response at the triclinic phase absorption region.…”
Section: Resultsmentioning
confidence: 96%
“…Among these compounds, lead phthalocyanine (PbPc) has been used for NIR photovoltaic devices owing to its small bandgap with an absorption band extended to about 1000 nm as well as a high extinct coefficient. [15][16][17] In this study, photomultiplication type NIR-OPDs are demonstrated both in PbPc/C 60 heterojunction and PbPc: C 60 mixed active layer devices. Compared with the planar heterojunction device, the mixed active layer devices exhibits a higher NIR response.…”
Photomultiplication type near-infrared (NIR) organic photodetectors (OPDs) are constructed with lead phthalocyanine (PbPc) and C 60 acted as the donor and acceptor, respectively. Compared with the PbPc/C 60 planar heterojunction device, the PbPc:C 60 mixed active layer devices show enhanced NIR responses. The optimized mixed active layer device displays an external quantum efficiency (EQE) of 22.8% at 870 nm under zero bias, which is about 45% higher than that of planar heterojunction device. Moreover, it also presents a detectivity in the order of 10 12 Jones and an EQE of 400% under applied bias of −8 V, indicating a photocurrent gain obtained in the device. Although the mixed active layer devices have a lower absorption in the NIR region, the donor: acceptor mixed structure increases the donor/acceptor contact area and forms continuous carrier transport paths, which increases the excitons dissociation efficiency and the photogenerated carriers collection efficiency and hence the response of the devices.
“…Therefore, triclinic crystal structures are desirable to enhance the optical sensitivity in the NIR regime for PbPc‐based OPDs. In 2018, Choi et al demonstrated an effective method to control the crystallinity of PbPc in blend films, where the substrate was heated in the process of preparation and C 60 served as both templating layer and electron extraction layer . X‐ray diffraction measurements confirmed the dramatic changes to the film's crystal structure.…”
Section: Nir Photoelectric Materials For Opdsmentioning
confidence: 99%
“…B, The specific detectivity spectra for the devices fabricated by different processing conditions. Source : Reproduced with permission from Reference Copyright 2018, American Chemical Society…”
Section: Nir Photoelectric Materials For Opdsmentioning
The inherent advantages of organic optoelectronic materials endow lightharvesting systems, including organic photovoltaics (OPVs) and organic photodiodes (OPDs), with multiple advantages, such as low-cost manufacturing, light weight, flexibility, and applicability to large-area fabrication, make them promising competitors with their inorganic counterparts. Among them, nearinfrared (NIR) organic optoelectronic materials occupy a special position and have become the subject of extensive research in both academia and industry.The introduction of NIR materials into OPVs extends the absorption spectrum range, thereby enhancing the photon-harvesting ability of the devices, due to which they have been widely used for the construction of semitransparent solar cells with single-junction or tandem architectures. NIR photodiodes have tremendous potential in industrial, military, and scientific applications, such as remote control of smart electronic devices, chemical/biological sensing, environmental monitoring, optical communication, and so forth. These practical and potential applications have stimulated the development of NIR photoelectric materials, which in turn has given impetus to innovation in light-harvesting systems. In this review, we summarize the common molecular design strategies of NIR photoelectric materials and enumerate their applications in OPVs and OPDs.
K E Y W O R D Snear infrared, organic optoelectronic materials, organic photodiodes, organic photovoltaics
“…For example, Su et al fabricated an OPD device with PbPc:C 70 blend as the active layer exhibiting broad-band response in the wavelength range of 300-1100 nm and the EQE of ≈30.2% in the NIR region (at a wavelength of 890 nm). [3] Meanwhile, Choi et al developed a PbPc-based inverted OPD device demonstrating the dark current density of ≈10 −6 A cm −2 and EQE of 31.1% at a wavelength of 970 nm, and 244 mA W −1 and 1.36 × 10 11 cm Hz 1/2 W −1 for a respective parameter of responsivity and specific detectivity measured at a bias voltage of −3 V. [28] Another Pc-derivative material, ClAlPc, also shows strong optical absorption in the NIR region with a narrow-band covering from 650 to 750 nm as compared to that of other Pc materials, such as PbPc, zinc phthalocyanine, and tin naphthalocyanine. [4,17,25,29,30] Joo et al has demonstrated another Pc-based NIR absorber, chloroindium phthalocyanine (ClInPc) blended with C 60 as the active layer, which achieved a dark current density of ≈10 −8 A cm −2 , EQE > 80% (at a wavelength of ≈705 nm), specific detectivity of 4.5 × 10 12 Jones, LDR of 77.2 dB, and frequency response of 2.85 kHz.…”
A near‐infrared photodetector with optimized performance is reported using varied thickness (20, 40, 60, and 80 nm) of the active layer comprising chloroaluminium phthalocyanine (ClAlPc) and fullerene (C70) at the ratio of 1:3, and TAPC:10% MoO3 and BPhen as electron and hole blocking layers, respectively. The experimental results reveal that the photodetector with 80 nm thick active layer provides the best performance at the wavelength of 730 nm achieving a very low dark current density of 1.15 × 10−9 A cm−2 and an external quantum efficiency of 74.6% with a responsivity of 0.439 A W−1 at −2 V bias. Additionally, the device exhibits a dramatic high detectivity of 4.14 × 1013 cm Hz1/2 W−1 at 0 V bias. The device exhibits not only a large linear response over a wide optical power range (LDR of 173.0 dB), but also a broad frequency response (778.7 kHz) and rise/fall time of 2.13/0.77 µs (based on trigger pulses at a frequency of 10 kHz) at the applied bias of −2 V. Based on the impedance spectroscopic study and the conventional characterization of electro‐optical properties, the results demonstrate the superiority of this device over other small molecule‐based near‐infrared photodetectors.
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