66‐2: <i>Invited Paper:</i> QD‐Based Sensors for Infrared Imaging

Malinowski, Paweł E.; Lee, Jiwon; Georgitzikis, Epimitheas; Pejović, Vladimir; Lieberman, Itai; Ke, Tung Huei; Li, Yunlong; Verschooten, Tom; Thijs, S.; Cheyns, And David

doi:10.1002/sdtp.14853

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…For example, the atmospheric absorption of photons with wavelengths ≈1400 nm makes excellent conditions for active imaging, whereas abundant photons around the 1550 nm wavelength coming from the sun are ideal for passive imaging. [ 23 ] Having access to these two bands simultaneously, but separately, would make a robust imaging system. Moreover, several other wavelengths that are already well established in the industry are of high interest and can be paired with each other in a single image sensor, such as 940 or 1300 nm.…”

Section: Introductionmentioning

confidence: 99%

Photodetectors Based on Lead Sulfide Quantum Dot and Organic Absorbers for Multispectral Sensing in the Visible to Short‐Wave Infrared Range

Pejović

Georgitzikis

Lieberman

et al. 2022

Adv Funct Materials

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Multispectral imaging in short-wave infrared (SWIR) is a powerful analytical technique because of the distinctive spectral properties of many materials in this range. However, conventional SWIR image sensors are beyond the reach of many applications due to their high price. Image sensors based on colloidal quantum dots (CQDs) are expected to deliver affordable infrared image sensors to wider application scope. So far, the demonstrated CQD image sensors do not have a multispectral capability. Here, a dual-band photodetector based on PbS CQDs is presented. By engineering the surface of CQDs, two oppositely facing pn junctions are fabricated in series, which enable sensing in two spectral channels. Furthermore, an optical cavity is designed that reduces the spectral crosstalk between the two channels and simultaneously enables wavelength-tunability in one channel. Finally, an organic photodiode (OPD) is integrated with a PbS CQD photodiode in a single device, leveraging a high sensitivity in visible and near-infrared (NIR) characteristics for OPDs. The presented photodetectors exhibit low dark current below 500 nA cm −2 at 1 V bias, a fast response measured in microseconds, as well as high external quantum efficiency, reaching 70% in NIR and 30% in SWIR.

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Section: Introductionmentioning

confidence: 99%