6.1 An over 120dB simultaneous-capture wide-dynamic-range 1.6e− ultra-low-reset-noise organic-photoconductive-film CMOS image sensor

[Paper] Analysis of Using Holes as Carriers in the Film in an 8K Stacked CMOS Image Sensor Overlaid with a Crystalline-Selenium Multiplication Layer

“…An 8K stacked CMOS image sensor overlaid with an avalanche-multiplication film was fabricated. Large spot noise was found to be generated when electrons were Equations (13) and (14) are used to express Equation…”

Solution-processed image sensors on flexible substrates

“…Photodiodes are conventionally used in active pixel architectures due to their large photoactive area and high internal capacitance, which maximizes the well capacity of the pixel. Despite this conventionalism, the photogenerated signal source is simply labeled as a photocurrent source, I Photo , in figure 11 since phototransistors and photoconductors have recently been shown in active pixels [86][87][88][89][90]. V Photo changes as charge from the photodetector element is accumulated at this node according to equation (8), where Q photogenerated is the amount of photogenerated charge and C photo and C G, SF are the photodetector and the source follower transistor's (T SF ) gate capacitance, respectively…”

“…Solution processable materials can also be integrated in an active pixel architecture on CMOS and are already finding their way to the market. For instance, numerous recent reports from Panasonic, a large producer of image sensors and cameras, reported the integration of organic photoconductive films [90,94]. Nishimura et al integrated an organic photoconductive film on top of a CMOS active pixel architecture similar to the 3 T design but with an extra transistor to form a feedback loop from the column amplifier in order to minimize noise [90].…”

“…For instance, numerous recent reports from Panasonic, a large producer of image sensors and cameras, reported the integration of organic photoconductive films [90,94]. Nishimura et al integrated an organic photoconductive film on top of a CMOS active pixel architecture similar to the 3 T design but with an extra transistor to form a feedback loop from the column amplifier in order to minimize noise [90]. Each pixel also consists of two sub-pixels, one large-area high sensitivity pixel and another small-area high saturation pixel for sensing high irradiances.…”

High-resolution ADCs design in sensors

“…Image Sensors are increasingly becoming "Key Devices" for a broad range of products, such as medical, measuring instruments, robot vision, specialized surveillance cameras, broadcast and other industrial applications, etc, where wide dynamic range, high sensitivity, high frame rate and low noise are vital specifications to realize the best possible imaging and sensing performance. For example, CMOS image sensors can achieve over 100 dB of simultaneous-capture wide dynamic range (SCWDR) [1]. In general, development of high-resolution and wide dynamic range sensors is limited by several factors, such as vertical and horizontal readout circuit, analog to digital conversion, and data output from the sensor, then putting forward high demands on column analogto-digital converters (ADCs), which is crucial unit to ensure sufficient vertical readout period in image sensor as shown in Fig.…”