Abstract:A prototyped 8K stacked CMOS image sensor overlaid with a crystalline-selenium-based avalanche-multiplication layer, in which holes are used as traveling carriers in the film, was fabricated. Analysis of energy-band diagrams through the film to the n-type floating-diffusion region revealed that (i) large spot noise in the captured image could be suppressed and (ii) the high voltage required for avalanche multiplication could be applied to the film by using holes as carriers even when defects existed in the fil… Show more
The recent improvements of complementary metal–oxide–semiconductor (CMOS) image sensors are playing an essential role in emerging high-definition video cameras, which provide viewers with a stronger sensation of reality. However, the devices suffer from decreasing sensitivity due to the shrinkage of pixels. We herein address this problem by introducing a hybrid structure comprising crystalline-selenium (c-Se)-based photoconversion layers and 8 K resolution (7472 × 4320 pixels) CMOS field-effect transistors (FETs) to amplify signals using the avalanche multiplication of photogenerated carriers. Using low-defect-level NiO as an electric field buffer and an electron blocking layer, we confirmed signal amplification by a factor of approximately 1.4 while the dark current remained low at 2.6 nA/cm2 at a reverse bias voltage of 22.6 V. Furthermore, we successfully obtained a brighter image based on the amplified signals without any notable noise degradation.
The recent improvements of complementary metal–oxide–semiconductor (CMOS) image sensors are playing an essential role in emerging high-definition video cameras, which provide viewers with a stronger sensation of reality. However, the devices suffer from decreasing sensitivity due to the shrinkage of pixels. We herein address this problem by introducing a hybrid structure comprising crystalline-selenium (c-Se)-based photoconversion layers and 8 K resolution (7472 × 4320 pixels) CMOS field-effect transistors (FETs) to amplify signals using the avalanche multiplication of photogenerated carriers. Using low-defect-level NiO as an electric field buffer and an electron blocking layer, we confirmed signal amplification by a factor of approximately 1.4 while the dark current remained low at 2.6 nA/cm2 at a reverse bias voltage of 22.6 V. Furthermore, we successfully obtained a brighter image based on the amplified signals without any notable noise degradation.
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