Energy distribution and depth profile in BF3 plasma doping

Kwok, Dixon T. K.; Chu, Paul K.; Takase, M.; Mizuno, B.

doi:10.1016/s0257-8972(00)01045-8

Cited by 13 publications

(7 citation statements)

References 8 publications

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“…As conventional implanters are not adapted to very low ion energies, implantation of doping elements via PBII processing with a collisional sheath is becoming a useful tool for shallow implantation. Plasma doping (or PLAD) thus constitutes, by far, the most important application of PBII in microelectronics [10,21,23,[126][127][128][129][130][131][132][133][134], along with the production of SOI (silicon on insulator) wafers with the smart-cut process [135][136][137][138].…”

Section: Plasma Dopingmentioning

confidence: 99%

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Pelletier

Anders

2005

IEEE Trans. Plasma Sci.

169

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After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modelling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used 1 of PBII&D to produce surgical implants, bio-and blood-compatible surfaces and coatings, etc.With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures.We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.2

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Section: Plasma Dopingmentioning

confidence: 99%

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Pelletier

Anders

2005

IEEE Trans. Plasma Sci.

169

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“…As conventional implanters are not adapted to very low ion energies, implantation of doping elements via PBII processing with a collisional sheath is becoming a useful tool for shallow implantation. Plasma doping (or PLAD) thus constitutes, by far, the most important application of PBII in microelectronics [17][18][19][20][21][22][23][24][25][26][27], along with the production of silicon on insulator (SOI) wafers with the smart-cut process [28][29][30][31].…”

Section: Modification Of Electric Properties: Plasma Dopingmentioning

confidence: 99%

Plasma-based ion implantation: a valuable technology for the elaboration of innovative materials and nanostructured thin films

Vempaire

Pelletier²,

Lacoste³

et al. 2005

Plasma Phys. Control. Fusion

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et al.. Plasma-based ion implantation : a valuable technology for the elaboration of innovative materials and nano-structured thin films. 12th Abstract. Plasma-based ion implantation (PBII), invented in 1987, can now be considered as a mature technology for thin film modification. After a short recall of the principle and physics of PBII, its advantages and disadvantages, as compared to conventional ion beam implantation, are listed and commented. The elaboration of thin films or the modification of their functional properties by PBII are now currently achieved in many application fields, such as microelectronics (plasma doping / PLAD), biomaterials (surgical implants, bio-and bloodcompatible materials), plastics (grafting, surface adhesion), metallurgy (hard coatings, tribology), to name a few. The major interest of PBII processing lies, on one hand, in its flexibility in terms of ion implantation energy (from zero to 100 keV), of operating conditions (plasma density, collisional or non-collisional ion sheath), and, on the other hand, in the possibility to easily transfer processes from the laboratory to industry. The possibility to modify the composition and the physical nature of the films, or to change drastically their physical properties over several orders of magnitude makes this technology very attractive for the elaboration of innovative materials, including metastable materials, and the realization of micro-or nanostructures. A review of the state-of-the-art in these domains is presented and illustrated through a few selected examples The perspectives opened by PBII processing, as well as its limitations, are discussed.

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“…PIII is a promising alternative although one need to realize that PIII does not have the feature of mass selection. The junction depth versus PIII-bias and other details have been discussed recently [44,47,48].…”

Section: Concept 7 Piii As a Technique To Fabricate P/n Junctionsmentioning

confidence: 99%

“…(5) PIII&D processes are not mono-energetic as discussed in detail by various researchers [47,79]. This feature may or may not be tolerable depending on the desired process.…”

Section: Issues and Limitationsmentioning

confidence: 99%

From plasma immersion ion implantation to deposition: a historical perspective on principles and trends

Anders

2002

Surface and Coatings Technology

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Plasma immersion techniques of surface modification are known under a myriad of names.The family of techniques reaches from pure plasma ion implantation, to ion implantation and deposition hybrid modes, to modes that are essentially plasma film deposition with substrate bias.In the most general sense, all plasma immersion techniques have in common that the surface of a substrate (target) is exposed to plasma and that relatively high substrate bias is applied. The bias is usually pulsed. In this review, the roots of immersion techniques are explored, some going back to the 1800s, followed by a discussion of the groundbreaking works of Adler and Conrad in the 1980s. In the 1990s, plasma immersion techniques matured in theoretical understanding, scaling, and the range of applications. First commercial facilities are now operational. Various immersion concepts are compiled and explained in this review. While gas (often nitrogen) ion implantation dominated the early years, film-forming immersion techniques and semiconductor processing gained importance. In the 1980s and 1990s we have seen exponential growth of the field but signs of slowdown are clear since1998. Nevertheless, plasma immersion techniques have found, and will continue to have, an important place among surface modification techniques.

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Energy distribution and depth profile in BF3 plasma doping

Cited by 13 publications

References 8 publications

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Plasma-based ion implantation: a valuable technology for the elaboration of innovative materials and nanostructured thin films

From plasma immersion ion implantation to deposition: a historical perspective on principles and trends

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