Abstract:et al.. Plasma-based ion implantation : a valuable technology for the elaboration of innovative materials and nano-structured thin films. 12th Abstract. Plasma-based ion implantation (PBII), invented in 1987, can now be considered as a mature technology for thin film modification. After a short recall of the principle and physics of PBII, its advantages and disadvantages, as compared to conventional ion beam implantation, are listed and commented. The elaboration of thin films or the modification of their func… Show more
“…This is the case of Ni films, which do not present any significant magnetic property after nitrogen implantation [142]. In contrast, the implantation of manganese films with nitrogen confers magnetic properties to the implanted layer [143].…”
Section: Changing Phases and Their Electrical And Optical Propertiesmentioning
confidence: 99%
“…The possibility of modifying the composition and physical nature of surface layers, and changing drastically their physical properties over several orders of magnitude, makes PBII technology very attractive for the elaboration of innovative materials, including metastable materials, and the realization of micro-or nanostructures [143].…”
Section: Changing Phases and Their Electrical And Optical Propertiesmentioning
After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modelling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used 1 of PBII&D to produce surgical implants, bio-and blood-compatible surfaces and coatings, etc.With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures.We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.2
“…This is the case of Ni films, which do not present any significant magnetic property after nitrogen implantation [142]. In contrast, the implantation of manganese films with nitrogen confers magnetic properties to the implanted layer [143].…”
Section: Changing Phases and Their Electrical And Optical Propertiesmentioning
confidence: 99%
“…The possibility of modifying the composition and physical nature of surface layers, and changing drastically their physical properties over several orders of magnitude, makes PBII technology very attractive for the elaboration of innovative materials, including metastable materials, and the realization of micro-or nanostructures [143].…”
Section: Changing Phases and Their Electrical And Optical Propertiesmentioning
After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modelling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used 1 of PBII&D to produce surgical implants, bio-and blood-compatible surfaces and coatings, etc.With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures.We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.2
“…Magnetic properties of the deposits reveal sensitivity to an annealing treatment. However, early tests of magnetic actuation undertaken with deposits on Ag or Al substrates reveal negativity for several potential reasons reference to [10,11] (i) the ratio of the substrate to the thin film thickness was larger than 10, thus probably blocking any dilatation effect since the substrates were made of Al, Ag or Si, (ii) the smallness of the actuated crystallites can prevent any long range actuation force to develop, (iii) the chemical composition of the as received thin layers can stand rather far from the best compositions whose actuation properties are above room temperature.…”
Section: Conclusion and Discussionmentioning
confidence: 99%
“…This type of microwave plasma reactor for deposit or for ion implantation has been described with details in refs. [10,11].…”
“…17 Unlike beamline implantation there is no systematic ion-mass separation that takes place in PPI. All the positive ions in the plasma can be implanted to some degree.…”
Plasma doping of semiconductors is being investigated for low energy ion implantation to form ultrashallow junctions. In plasma doping, ions are extracted from a quasicontinuous plasma using a pulsed bias on the substrate. Plasma-based implantation techniques have the potential for higher throughput than those attainable with conventional accelerator beamlines due to the higher current densities possible with plasma sources. In this work, results from a computational investigation of plasma sources for doping of semiconductors will be discussed. An inductively coupled plasma ͑ICP͒ was used to generate ions at pressures of a few to tens of millitorr. A pulsed bias up to −20 kV having lengths of tens of microseconds was applied to the substrate to accelerate the ions. Results are presented for Ar/ NF 3 gas mixtures which serve as surrogates for the Ar/ BF 3 mixtures that would provide boron doping. The consequences of bias voltage waveform, ICP power, operating pressure, and aspect ratio of the reactor on discharge characteristics and ion energy and angular distributions ͑IEADs͒ to the substrate will be discussed. The shape of the bias waveform has important consequences on the IEADs not only because of the transit times of the ions but also due to the instabilities that may be launched into the plasma. The aspect ratio of the reactor influences the angular uniformity of the IEADs, particularly when using large biases.
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