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Low sheet resistance and extremely shallow profiles are achieved by plasma doping with low process damage and high activation efficiency. High performance pMOSFETs have been also fabricated by taking advantage of wellcontrolled plasma doped extensions.Linear transconductance (Gm) of the pMOSFET with plasma doped extensions is about 30% larger than that of 10 keV ion implanted device with same source/drain junction depth.

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Hot-carrier-induced photoemission of subquarter-micron n-MOSFETs is analyzed using a specially designed test structure, which has a wide channel width of 2.0 mm for sufficient photoemission intensity. Since the test structure consists of parallel-connected unit MOSFETs and photoemission images are uniform, it can be estimated that measured spectra are the same as those from unit MOSFETs. The relation between photon counts and photon energy suggests that photon energy has a Boltzman distribution; exp( ). The electron temperature calculated from photon emission spectrum takes minimum value at the channel length of 0.23 m. If is related to the device reliability, it suggests the possibility that the device structure optimized for a certain channel length may not be optimum for other channel length devices.

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