The circuit simulation model Hiroshima-university STARC IGFET Model silicon-on-insulator (HiSIM-SOI) for the fully depleted SOI metal-oxide-semiconductor field-effect-transistor (MOSFET) is developed based on the surafce-potential description. To include all device features of the SOI-MOSFET explicitly, the surface potential values not only at the SOI surface but also the back side, as well as the bulk back-gate are solved iteratively. The total iteration for the potential calculation requires only about twice as much calculation time as the bulk-MOSFET case, solving ony at the surface. The model reproduces measured I-V characteristics within numerical accuracy, and is proved stable circuit convergence.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.