M. S. Saidov scite author profile

Polycrystalline Si 0.4 Ge 0.6 was prepared by electron-beam float-zone melting, and its thermoelectric properties were studied in the intrinsic region. The samples were found to be p-type, with a room-temperature resistivity from 5 to 20 Ω cm. The thermoelectric figure of merit of the alloy in the intrinsic region (500 − 1000 K) is lower than that of heavily doped alloys. Above 1000 K, a sharp rise in its thermoelectric figure of merit would be expected.

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M. S. Saidov

Electrophysical properties of solar polycrystalline silicon and its n +-p structures at elevated temperatures

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Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell

Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

Study of growth conditions of silicon carbide epitaxial layers

Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

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