Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

“…Ge-doped Si is of potential interest for application in microelectronics. In particular, it has been reported that Si-Ge solid solutions at low Ge contents, as well as Si1-xGex epitaxial layers, exhibit higher radiation resistance than Si [1][2][3]. The improved radiation-hardness is attributed to the role of Ge atoms as centres of annihilation of radiation-induced primary defects [1,3].…”

“…In particular, it has been reported that Si-Ge solid solutions at low Ge contents, as well as Si1-xGex epitaxial layers, exhibit higher radiation resistance than Si [1][2][3]. The improved radiation-hardness is attributed to the role of Ge atoms as centres of annihilation of radiation-induced primary defects [1,3]. Moreover, its higher absorption coefficient than Si makes it suitable for certain radiation detectors and imaging applications [4].…”

Diode Characteristics and Thermal Donor Formation in Germanium-Doped Silicon Substrates

“…This is important with the trend towards larger diameter wafers, as well as towards thinner substrates for the case of the photovoltaic industry. It has been also found that Si-Ge solid solutions with Ge contents even below 1%, as well as Si 1-x Ge x epitaxial layers, exhibit higher radiation resistance than Si (3)(4)(5). The improved radiation-hardness is attributed to the role of Ge atoms as centres of annihilation of radiation-induced primary defects (3,5).…”

“…It has been also found that Si-Ge solid solutions with Ge contents even below 1%, as well as Si 1-x Ge x epitaxial layers, exhibit higher radiation resistance than Si (3)(4)(5). The improved radiation-hardness is attributed to the role of Ge atoms as centres of annihilation of radiation-induced primary defects (3,5). Moreover, the higher absorption coefficient than Si makes it suitable for specific radiation detectors and imaging applications (6).…”

“…It has been also found that SiGe solid solutions with Ge contents below 1%, as well as Si 1-x Ge x epitaxial layers, exhibit higher radiation resistance than Si (2-4). The improved radiation-hardness is attributed to the role of Ge atoms as centres of annihilation of radiation-induced primary defects (2,4). Recently, Londos et al performed an extensive study of the influence of germanium doping on the behaviour of oxygen and carbon impurity related complexes in electron irradiated silicon (5).…”