Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

Rafi, JM; Vanhellemont, Jan; Simoen, Eddy; Chen, J; Zabala, M.; Campabadal, F.

doi:10.1016/j.physb.2009.08.150

Cited by 8 publications

(19 citation statements)

References 11 publications

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“…Only small differences were observed between the diodes processed on the two types of substrates [20]. The reverse currents in the GCZ Si diodes were slightly higher than in 6 their CZ Si counterparts although a somewhat higher free carrier concentration was also extracted for the GCZ Si diodes (2.20 × 10 14 cm −3 ) compared to the CZ Si ones (2.05 × 10 14 cm −3 ) (Fig.…”

Section: Impact Of Germanium Doping On Diode Characteristics and Thermentioning

confidence: 85%

“…In the present paper a brief overview will be given of effects of germanium doping in the range between 10 16 cm −3 and 10 19 cm −3 based on previously published results of some of the authors [5,6,7,8,9,10,14,19] and based on recent results on suppression of thermal donor [20], COP and FPD formation [21] as well as on effects on diode characteristics and radiation induced defects [20,21,22]. Whenever possible, the obtained results are compared with results obtained by other groups.…”

Section: Introductionmentioning

confidence: 95%

“…The TDD formation has also an important impact on the diode leakage current J leak [20] as illustrated in Fig. 7 showing J leak for depletion depths of 5, 10 and 15 µm as function of the 2 h anneal temperature.…”

Section: Impact Of Germanium Doping On Diode Characteristics and Thermentioning

confidence: 99%

“…As-grown wafers from both crystals received also the same heat treatment to study thermal donor formation. The impact of germanium doping on diode characteristics and on thermal donor formation was analyzed by means of capacitance-voltage (C-V) and current-voltage (I-V) measurements [20] and deep level transient spectroscopy (DLTS) [25]. Another set of diodes was irradiated at room temperature with 2 MeV electrons to compare the radiation hardness of both types of diodes [22] …”

Section: Czochralski Growth Of Germanium Doped Silicon Crystals and Dmentioning

confidence: 99%

“…Besides the slower TDD formation in Ge doped substrates, there is a slower thermal donor formation during thermal anneals in a N 2 ambient compared to a N 2 /H 2 ambient [20]. This is due to a hydrogen mediated increase of interstitial oxygen diffusivity resulting in a higher TDD formation rate for anneals in a hydrogen containing atmosphere [30].…”

Section: Impact Of Germanium Doping On Diode Characteristics and Thermentioning

confidence: 99%

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Germanium doping for improved silicon substrates and devices

Vanhellemont

Chen

Lauwaert

et al. 2011

Journal of Crystal Growth

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During the last decade, the 300 mm silicon wafer has been optimized and one is studying the move to 450 mm crystals and wafers. The ever increasing silicon crystal diameter leads to two important trends with respect to substrate characteristics: the interstitial oxygen concentration decreases while the size of grown in voids (COP's) in vacancy-rich crystals is increasing.The first effect is due to the large melt in which movements have to be controlled and partly suppressed by the use of magnetic fields. This magnetic confinement leads to a more uniform dopant incorporation but at the same time to a more limited transport of oxygen from the quartz crucible to the melt and the growing crystal. The reduced interstitial oxygen concentration and the lower thermal budget of modern device processing leads to strongly reduced oxygen precipitation and thus internal gettering capacity.The increasing COP size (accompanied by a decreasing density) is caused by the decreasing pulling rate and thermal gradient that have to be used in order to avoid dislocation formation. The slower cooling of the crystal leads to a decreased void nucleation rate and at the same time to an increased thermal budget for void growth as well as a larger number of vacancies available per void. Journal of Crystal Growth November 9, 2010 In the present paper the effect of germanium doping in the range between 10 16 cm −3 and 10 19 cm −3 on COP formation and oxygen precipitation is discussed and illustrated. Also the beneficial effect of germanium doping with respect to wafer breakage during processing, with respect to the suppression of thermal donor formation and with respect to improving device radiation hardness is addressed. Preprint submitted to

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Section: Impact Of Germanium Doping On Diode Characteristics and Thermentioning

confidence: 85%

Section: Introductionmentioning

confidence: 95%

Section: Impact Of Germanium Doping On Diode Characteristics and Thermentioning

confidence: 99%

Section: Czochralski Growth Of Germanium Doped Silicon Crystals and Dmentioning

confidence: 99%

Section: Impact Of Germanium Doping On Diode Characteristics and Thermentioning

confidence: 99%

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Germanium doping for improved silicon substrates and devices

Vanhellemont

Chen

Lauwaert

et al. 2011

Journal of Crystal Growth

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Electron irradiation induced defects in germanium‐doped Czochralski silicon substrates and diodes

Chen

Vanhellemont

Simoen

et al. 2010

Phys. Status Solidi (c)

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Ge doping in Czochralski silicon (Cz‐Si) crystal has been proposed as a successful application of the so‐called “impurity engineering” leading to improved properties of Si wafers and/or devices. In an attempt to understand the beneficial effect of Ge doping on irradiation hardness for actual devices, substrates and p‐on‐n diodes, both with and without Ge doping, were exposed to electron irradiation and characterized using deep level transient spectroscopy (DLTS). Our results suggest a concentration of 1019 cm–3 Ge doping has only a limited effect on the total density of vacancy related deep levels in silicon (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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