This paper describes the silicon microstrip modules in the barrel section of the SemiConductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The module requirements, components and assembly techniques are given, as well as first results of the module performance on the fully-assembled barrels that make up the detector being installed in the ATLAS experiment.
The ABCD3TA is a 128-channel ASIC with binary architecture for the readout of silicon strip particle detectors in the Semiconductor Tracker of the ATLAS experiment at the Large Hadron Collider (LHC). The chip comprises fast front-end and amplitude discriminator circuits using bipolar devices, a binary pipeline for first level trigger latency, a second level derandomising buffer and data compression circuitry based on CMOS devices. It has been designed and fabricated in a BiCMOS radiation resistant process. Extensive testing of the ABCD3TA chips assembled into detector modules show that the design meets the specifications and maintains the required performance after irradiation up to a total ionising dose of 10 Mrad and a 1-MeV neutron equivalent fluence of 2×1014 n/cm2, corresponding to 10 years of operation of the LHC at its design luminosity. Wafer screening and quality assurance procedures have been developed and implemented in large volume production to ensure that the chips assembled into modules meet the rigorous acceptance criteria
The hydrogen-plasma-accelerated formation of shallow thermal donors in silicon has been studied for a wide range of doping concentration and interstitial oxygen content
[normalOnormali]
by electrical and spectroscopic techniques. The plasma-hydrogenated material has been heat treated for different times in the temperature range of
275–500°C
. It is shown that, besides oxygen thermal donors (OTDs), hydrogen-related shallow thermal donors (STDHs) also play a crucial role in the hydrogen-assisted creation of excess carriers. The impact of different factors on the introduction rate of the shallow donors will be discussed, whereby a strong role is played by the doping concentration and type (i.e., the Fermi-level position during the thermal anneal in air). Generally, shallow donor formation is faster in p- compared to n-type Si, which is associated with the different charge state of H. From combined deep-level transient spectroscopy and Fourier transform infrared absorption spectroscopy, it is concluded that the additional free carriers are contributed by both STDH and OTD centers, so that H not only plays a catalytic role but actively takes part in the donor formation, depending on the experimental conditions. Finally, from our data some conclusions can be made regarding the nature of the STDHs, which is still a matter of debate.
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