Radiation effects in Si-Ge quantum size structure (Review)

Соболев, Н. А.

doi:10.1134/s1063782613020188

Cited by 8 publications

(2 citation statements)

References 51 publications

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“…[15]- [17]. Designing and modelling on the basis of silicon of the radiation-resistant pressure sensors, which are used in the aerospace, rocket and space industries, thermonuclear and nuclear energy [18]- [20], and of the strained heterostructures, which can be applied in the fields of high radiation [21]- [23], require the detailed research of the impact of radiation irradiation and deformation on the electrical properties of silicon. In most of the works, only the effect of radiation or deformation on the physical properties of silicon single crystals has been considered.…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Luniov

Lyshuk

Maslyuk

et al. 2019

Latvian Journal of Physics and Technical Sciences

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Temperature dependencies for Hall mobility of electrons for the uniaxially deformed n-Si single crystals, irradiated by the flow of electrons Ω=1·1017 el./cm2 with the energy of 12 MeV, are obtained on the basis of piezo-Hall effect measurements. From the analysis of these dependencies it follows that under the uniaxial pressure (0–0.42) GPa and (0–0.37) GPa along crystallographic directions [100] and [111], respectively, the deformation-induced increase of the Hall mobility has been observed. On the basis of the proposed theoretical model of mobility, this increase is explained by the decrease of the amplitude of a large-scale potential with an increase in the magnitude of uniaxial deformation and, accordingly, the probability of electron scattering on this potential. The slight discrepancy between the obtained experimental results and the relevant theoretical calculations at the low temperatures is due to the fact that the electron scattering on the radiation defects, created by the electron radiation, was not taken into account in the calculations. The decrease in Hall mobility of electrons along with an increase in temperature for unirradiated and irradiated silicon single crystals is explained by the growth of the probability of electron scattering on the optical phonons that are responsible for the intervalley scattering in silicon. The obtained results can be used in designing and modelling on the basis of n-Si single crystals of various electronic devices of micro- and nanoelectronics, which can be subject to the extreme conditions of action of the significant radiation and deformation fields.

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Section: Introductionmentioning

confidence: 99%

Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Luniov

Lyshuk

Maslyuk

et al. 2019

Latvian Journal of Physics and Technical Sciences

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“…A review about radiation effects in Si‐Ge quantum size structures is given in Ref. . The displacement energies commonly applied by the authors for ion cascade calculations are summarised in Ref.…”

Section: Introductionmentioning

confidence: 99%

Ion‐beam induced effects in multi‐layered semiconductor systems

Wendler

Соболев

Redondo-Cubero

et al. 2016

Physica Status Solidi (b)

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In this article, ion-beam induced effects in multi-layered III-V semiconductor structures are reviewed. Besides doping, important effects occurring during ion irradiation are defect formation and diffusion, amorphisation and intermixing. It is shown that these processes are closely related to each other. In layered systems consisting of group III-phosphides and -arsenides, which can be amorphised by ion implantation, cascade mixing is the dominant mixing mechanism at low temperatures. At a critical temperature, the crystalline structure is retained after implantation and the mixing efficiency may drop down because cascade mixing is more efficient in amorphous semiconductors than in their crystalline counterparts. A further increase of temperature results in an increase of the mixing efficiency due to thermally enhanced processes. Although much less experimental data exist on ion-beam induced effects in layered group III-nitride systems, the results suggest that these systems are not amorphised during ion implantation. In this case, the experimental results can be explained assuming recoil rather than cascade mixing to occur with the former being much weaker than the latter. A few applications of ion implantation of multi-layered semiconductor systems are addressed.

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