Si-Ge solid solution single crystal growth by electron beam floating zone technique

Saidov, M. S.; Yusupov, A.; Umerov, R. S.

doi:10.1016/0022-0248(81)90331-6

Cited by 21 publications

(14 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The reason for this was the lack of equipment which is able to process material with much higher melting points. There was a report on FZ-solidification of Si-rich Si-Ge by Gurevich et al [17], but it lasted another 15 years until the first single crystalline Si-Ge with a Sicontent down to 65 at % was grown by employing FZ growth with electron beam heating [18]. This is a technique which results in even larger temperature gradients and critical growth rates (refer to Table I).…”

Section: Float Zone Methodsmentioning

confidence: 99%

“…If bottom seeding is used, the axial concentration and temperature fields damp the flow. Indeed the material by downward FZ technique showed more nucleations than in the opposite case, which indicates more pronounced convection driven composition fluctuations near the phase boundary [18].…”

Section: Gravity Effectsmentioning

confidence: 99%

“…For example by rapid cooling of a melt [22], by inserting a Ge bar into a Si rod [23], by inserting pieces of Si into a Ge rod (or vice versa) [10], or even producing stacks of alternating Ge and Si tablets [24]. Also sintered powder alloys were used [25].…”

Section: 2 Starting Materialsmentioning

confidence: 99%

“…And, when the Si piece is reached, a gradient in composition is built up. Stability studies found that monocrystals can be obtained if the gradients do not exceed 10 at %/cm [27,18].…”

Section: 2 Starting Materialsmentioning

confidence: 99%

“…Especially the usual necking procedure has to be avoided. Another source of defect formation occurring when the crystal is pulled from the melt, is a polycrystalline peripheral layer that forms when the melt creeps up the grown material and solidifies in an uncontrolled manner [18,52].…”

Section: Seedingmentioning

confidence: 99%

See 4 more Smart Citations

Bulk growth of silicon-germanium solid solutions

Schilz¹,

Romanenko

1995

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

This paper provides an overview of the technology for growing bulk silicon-germanium solid solutions and of the structural properties of the solidified materials. It is an attempt to summarize and value the methods and efforts applied to the controlled crystallization of silicon-germanium melts which were employed during the last four decades. The especially high degree of segregation makes the system sensitive to small changes of growth conditions, which leads to inhomogeneities and strain. The future availability of homogeneous, low-defect Si-Ge crystals through the whole composition range is briefly discussed.

show abstract

Section: Float Zone Methodsmentioning

confidence: 99%

Section: Gravity Effectsmentioning

confidence: 99%

Section: 2 Starting Materialsmentioning

confidence: 99%

“…And, when the Si piece is reached, a gradient in composition is built up. Stability studies found that monocrystals can be obtained if the gradients do not exceed 10 at %/cm [27,18].…”

Section: 2 Starting Materialsmentioning

confidence: 99%

Section: Seedingmentioning

confidence: 99%

See 3 more Smart Citations

Bulk growth of silicon-germanium solid solutions

Schilz¹,

Romanenko

1995

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

show abstract

Axial temperature distribution in Silicon‐Germanium grown by the RF‐heated float zone technique

Schulz

Wollweber

Darowski

et al. 1997

Cryst. Res. Technol.

View full text Add to dashboard Cite

Im Konzentrationsbereich von 0 bis 25 at% Germanium wurde das Segregationsverhalten von Silizium-Germanium-Einkristallen geziichtet mit Hilfe des HF-beheizten tiegelfreien Zonenschmelzverfahrens untersucht. Vollstiindig versetzungsfreie Kristalle mit bis zu 8 at% Germanium wurden geziichtet. Storungen des einkristalline Wachstum waren im wesentlichen auf konstitutionelle Unterkiihlung zuriickzufiihren. Mittels pyrometrischer Temperaturmessung wurde der Anstieg der axialen Temperatwerteilung AT/At in der Nlihe der Wachstumsphasengrenze bestimmt und daraus die kritische Ziehgeschwindigkeit abgeleitet. Die hlessungen zeigten, dai3 mit zunehmenden Germaniumgehalt der Temperaturgradient im Kristall groBer wird.The FtF-heated float zone method has been used to study the segregation behaviour of silicongermanium solid solutions in the concentration range from 0 to 25at% germanium. Completely dislocation free crystals up to 8 at% germanium could be obtained. Since constitutional supercooling is the main reason preventing single crystalline 'growth, pyrometric temperature measurements have been performed to reveal the temperature slope at the interface and to determine the critical growth rate. The temperature gradient AT1A.z was found to increase with increasing germanium concentration.

show abstract

Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

et al. 2005

View full text Add to dashboard Cite

Polycrystalline Si 0.4 Ge 0.6 was prepared by electron-beam float-zone melting, and its thermoelectric properties were studied in the intrinsic region. The samples were found to be p-type, with a room-temperature resistivity from 5 to 20 Ω cm. The thermoelectric figure of merit of the alloy in the intrinsic region (500 − 1000 K) is lower than that of heavily doped alloys. Above 1000 K, a sharp rise in its thermoelectric figure of merit would be expected.

show abstract

Si-Ge solid solution single crystal growth by electron beam floating zone technique

Cited by 21 publications

References 2 publications

Bulk growth of silicon-germanium solid solutions

Bulk growth of silicon-germanium solid solutions

Axial temperature distribution in Silicon‐Germanium grown by the RF‐heated float zone technique

Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

Contact Info

Product

Resources

About