A systematic study of various, nominally undoped ZnO single crystals, either hydrothermally grown ͑HTG͒ or melt grown ͑MG͒, has been performed. The crystal quality has been assessed by x-ray diffraction, and a comprehensive estimation of the detailed impurity and hydrogen contents by inductively coupled plasma mass spectrometry and nuclear reaction analysis, respectively, has been made also. High precision positron lifetime experiments show that a single positron lifetime is observed in all crystals investigated, which clusters at 180-182 ps and 165-167 ps for HTG and MG crystals, respectively. Furthermore, hydrogen is detected in all crystals in a bound state with a high concentration ͑at least 0.3 at. %͒, whereas the concentrations of other impurities are very small. From ab initio calculations it is suggested that the existence of Zn-vacancyhydrogen complexes is the most natural explanation for the given experimental facts at present. Furthermore, the distribution of H at a metal/ZnO interface of a MG crystal, and the H content of a HTG crystal upon annealing and time afterward has been monitored, as this is most probably related to the properties of electrical contacts made at ZnO and the instability in p-type conductivity observed at ZnO nanorods in literature. All experimental findings and presented theoretical considerations support the conclusion that various types of Zn-vacancy-hydrogen complexes exist in ZnO and need to be taken into account in future studies, especially for HTG materials.

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SnO2 is a semiconductor with a wide optical bandgap (3.5 eV), which makes it an attractive transparent semiconducting oxide (TSO) for electronic and opto‐electronic applications. At elevated temperatures it is, however, much more unstable than other TSOs (such as ZnO, Ga2O3, or In2O3). This leads to a rapid decomposition even under very high oxygen pressures. Our experiments showed that stoichiometric SnO2 does not melt up to 2100 °C, in contradiction to earlier published data. Bulk SnO2 single crystals, that could provide substrates for epitaxial growth, have not been reported so far. Hereby we report on truly bulk SnO2 single crystals of 1 inch diameter grown by physical vapor transport (PVT). The most volatile species during SnO2 decomposition is, in addition to oxygen, SnO, which is stable in the gas phase at high temperature and reacts again with oxygen at lower temperatures to form SnO2. We identified a relatively narrow temperature window, temperature gradients and a ratio of SnO/O2 for providing the best conditions for SnO2 single crystal growth. X‐ray powder diffraction (XRD) proved the single SnO2 phase. Moreover, by selecting a suitable SnO/O2 ratio it was possible to obtain either n‐type conductivity with electron concentrations up to 2 × 1018 cm−3 and electron mobilities up to 200 cm2 V−1 s−1, or insulating behavior. The crystals exhibited an optical absorption edge located at 330–355 nm, depending on the crystal orientation, and a good transparency over visible and near infrared (NIR) spectra.

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The peculiar properties of zinc oxide (ZnO) make this material interesting for very different applications like light emitting diodes, lasers, and piezoelectric transducers. Most of these applications are based on epitaxial ZnO layers grown on suitable substrates, preferably bulk ZnO. Unfortunately the thermochemical properties of ZnO make the growth of single crystals difficult: the triple point 1975 deg C., 1.06 bar and the high oxygen fugacity at the melting point p_O2 = 0.35 bar lead to the prevailing opinion that ZnO crystals for technical applications can only be grown either by a hydrothermal method or from "cold crucibles" of solid ZnO. Both methods are known to have significant drawbacks. Our thermodynamic calculations and crystal growth experiments show, that in contrast to widely accepted assumptions, ZnO can be molten in metallic crucibles, if an atmosphere with "self adjusting" p_O2 is used. This new result is believed to offer new perspectives for ZnO crystal growth by established standard techniques like the Bridgman method.Comment: 6 pages, 6 figures, accepted for J. Crystal Growt