Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T(c)) is traditionally accomplished by chemical substitution-as in Ba(x)Sr(1-x)TiO(3), the material widely investigated for microwave devices in which the dielectric constant (epsilon(r)) at GHz frequencies is tuned by applying a quasi-static electric field. Heterogeneity associated with chemical substitution in such films, however, can broaden this phase transition by hundreds of degrees, which is detrimental to tunability and microwave device performance. An alternative way to adjust T(c) in ferroelectric films is strain. Here we show that epitaxial strain from a newly developed substrate can be harnessed to increase T(c) by hundreds of degrees and produce room-temperature ferroelectricity in strontium titanate, a material that is not normally ferroelectric at any temperature. This strain-induced enhancement in T(c) is the largest ever reported. Spatially resolved images of the local polarization state reveal a uniformity that far exceeds films tailored by chemical substitution. The high epsilon(r) at room temperature in these films (nearly 7,000 at 10 GHz) and its sharp dependence on electric field are promising for device applications.

Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500 degrees C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

vast improvements in energy density may be achieved with lithium metal anodes owing to their high gravimetric capacity (3869 mA h g −1 ) and low density (0.534 g cm −3 ). However, adoption of rechargeable lithium metal batteries has been unsuccessful thus far due to safety concerns associated with short circuits that occur when Li dendrites grow through the liquid electrolyte during the charging process. [4][5][6] Although several approaches have reduced dendrite formation, [7][8][9][10] to date the phenomenon has not been avoided under all relevant conditions. Nonflammable inorganic solid electrolytes, paired with Li metal anodes, could result in high energy density yet safe rechargeable lithium batteries. [11][12][13][14][15] As reviewed by Takada, [12] inorganic solid electrolytes have now been widely studied, [16][17][18][19][20] but are not yet commercialized. Monroe and Newman have suggested that dendrite growth during the plating process may be suppressed if the liquid electrolyte is replaced with a Li-ion conducting solid electrolyte of a sufficiently high shear modulus. [21,22] According to this criterion, numerous inorganic solid electrolytes should be able to suppress dendrite formation. However, multiple research groups have recently reported cases where ceramic solid electrolytes paired with a Li metal anode experience a short circuit Li deposition is observed and measured on a solid electrolyte in the vicinity of a metallic current collector. Four types of ion-conducting, inorganic solid electrolytes are tested: Amorphous 70/30 mol% Li 2 S-P 2 S 5 , polycrystalline β-Li 3 PS 4 , and polycrystalline and single-crystalline Li 6 La 3 ZrTaO 12 garnet. The nature of lithium plating depends on the proximity of the current collector to defects such as surface cracks and on the current density. Lithium plating penetrates/infiltrates at defects, but only above a critical current density. Eventually, infiltration results in a short circuit between the current collector and the Li-source (anode). These results do not depend on the electrolytes shear modulus and are thus not consistent with the Monroe-Newman model for "dendrites." The observations suggest that Li-plating in pre-existing flaws produces crack-tip stresses which drive crack propagation, and an electrochemomechanical model of plating-induced Li infiltration is proposed. Lithium short-circuits through solid electrolytes occurs through a fundamentally different process than through liquid electrolytes. The onset of Li infiltration depends on solid-state electrolyte surface morphology, in particular the defect size and density.

Ferroelectric ferromagnets are exceedingly rare, fundamentally interesting multiferroic materials that could give rise to new technologies in which the low power and high speed of field-effect electronics are combined with the permanence and routability of voltage-controlled ferromagnetism. Furthermore, the properties of the few compounds that simultaneously exhibit these phenomena are insignificant in comparison with those of useful ferroelectrics or ferromagnets: their spontaneous polarizations or magnetizations are smaller by a factor of 1,000 or more. The same holds for magnetic- or electric-field-induced multiferroics. Owing to the weak properties of single-phase multiferroics, composite and multilayer approaches involving strain-coupled piezoelectric and magnetostrictive components are the closest to application today. Recently, however, a new route to ferroelectric ferromagnets was proposed by which magnetically ordered insulators that are neither ferroelectric nor ferromagnetic are transformed into ferroelectric ferromagnets using a single control parameter, strain. The system targeted, EuTiO(3), was predicted to exhibit strong ferromagnetism (spontaneous magnetization, approximately 7 Bohr magnetons per Eu) and strong ferroelectricity (spontaneous polarization, approximately 10 microC cm(-2)) simultaneously under large biaxial compressive strain. These values are orders of magnitude higher than those of any known ferroelectric ferromagnet and rival the best materials that are solely ferroelectric or ferromagnetic. Hindered by the absence of an appropriate substrate to provide the desired compression we turned to tensile strain. Here we show both experimentally and theoretically the emergence of a multiferroic state under biaxial tension with the unexpected benefit that even lower strains are required, thereby allowing thicker high-quality crystalline films. This realization of a strong ferromagnetic ferroelectric points the way to high-temperature manifestations of this spin-lattice coupling mechanism. Our work demonstrates that a single experimental parameter, strain, simultaneously controls multiple order parameters and is a viable alternative tuning parameter to composition for creating multiferroics.

Electrical properties of nominally undoped β-Ga2O3 crystals grown by the Czochralski method from an iridium crucible under a carbon dioxide containing atmosphere were studied by temperature dependent conductivity and Hall effect measurements as well as deep level transient spectroscopy. All crystals were n-type with net donor concentrations between 6 × 1016 and 8 × 1017 cm−3. The Hall mobility of electrons was on average 130 cm2/Vs at room temperature and attained a maximum of 500 cm2/Vs at 100 K. The donor ionization energy was dependent on the donor concentration. Extrapolation of this dependence to zero concentration yielded a value of about 36 meV for isolated donors agreeing well with the ionization energy derived from effective-mass theory. Three deep electron traps were found at 0.55, 0.74, and 1.04 eV below the conduction bandedge. The trap at EC – 0.74 eV was detected in all samples with concentrations of 2 – 4 × 1016 cm−3. This concentration is comparable to that of compensating acceptors we have to take into account for an explanation of the temperature dependent electron density. Therefore, under the assumption that the electron trap at EC – 0.74 eV possesses acceptor character, this trap could be the dominating compensating acceptor in our crystals. Besides, a value of ΦB = (1.1 ± 0.1) V was determined for the Schottky barrier height of Ni on the (100) surface of n-type β-Ga2O3.

Abstract

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Transparent semiconducting β-Ga 2 O 3 single crystals were grown by the Czochralski method from an iridium crucible under a dynamic protective atmosphere to control partial pressures of volatile species of Ga 2 O 3 . Thermodynamic calculations on different atmospheres containing CO 2 , Ar and O 2 reveal that CO 2 growth atmosphere combined with overpressure significantly decreases evaporation of volatile Ga 2 O 3 species without any harm to iridium crucible. It has been found that CO 2 , besides providing high oxygen concentration at high temperatures, is also acting as a minor reducing agent for Ga 2 O 3 . Different coloration of obtained crystals as well as optical and electrical properties are directly correlated with growth conditions (atmosphere, pressure and temperature gradients), but not with residual impurities. Typical electrical properties of the n-type β-Ga 2 O 3 crystals at room temperature are: ρ = 0.1 -0.3 Ωcm, μ n,Hall = 110 -150 cm 2 V -1 s -1 , n Hall = 2 -6×10 17 cm -3 and E Ionisation = 30 -40 meV. A decrease of transmission in the IR-region is directly correlated with the free carrier concentration and can be effectively modulated by the dynamic growth atmosphere. Electron paramagnetic resonance (EPR) spectra exhibit an isotropic shallow donor level and anisotropic defect level. According to differential thermal analysis (DTA) measurements, there is substantially no mass change of β-Ga 2 O 3 crystals below 1200 °C (i.e. no decomposition) under oxidizing or neutral atmosphere, while the mass gradually decreases with temperature above 1200 °C. High resolution transmission electron microscopy (HRTEM) images at atomic resolution show the presence of vacancies, which can be attributed to Ga or O sites, and interstitials, which can likely be attributed to Ga atoms.