Nonequilibrium diffusion of Boron in 3C SiC was performed using a flow of carbon vacancies. The temperature of diffusion was 1150-1250℃ and concentration of Boron in doped area reached about 1019 to 1020 cm-3. It is shown that after thermal annealing in vacuum the characteristics of fabricated structures are close to those of the structures made by the conventional technology
The low temperature diffusion of Boron in bulk SiC crystals is investigated and simplified model of such diffusion is presented. The method of UV stimulated etching by aqueous solution of KOH is proposed and some experimental data on influence of defects on quality of prepared p-n junctions are presented
The characteristics of boron diffusion in 3C-SiC at low temperature have been measured
using spreading resistance technique and electroluminescence spectroscopy. The coefficient of boron
diffusion in the temperature range of 1150 –1250°С has been found to be about 5.5 x 10-11–5.0 x 10-10
cm2/sec and the activation energy of boron diffusion was determined to be about 0.9 –1.15 eV.
Electroluminescence spectra of 3C-SiC p-n junction structures showed peaks at 750 and 630 nm due
to growth defects and carbon-silicon divacancies respectively.
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