Electrophysical properties of solar polycrystalline silicon and its n +-p structures at elevated temperatures

Some electrophysical properties of polycrystalline silicon obtained in a solar oven

“…In [4][5][6][7][8][9][10] it was noted that the grain of polycrystalline silicon consists of atoms Si, and the roughness it its surface consists of residual impurity atoms. It was found that their amount increased from nucleus to surface, while conversely, the amount of silicon atoms decreased.…”

“…It is known that the electrophysical properties of polycrystalline semiconductors are explained by charge transfer processes in the between grain boundary areas [1][2][3][4][5][6][7][8][9][10]. In g. 5 illustrates the temperature dependence of the r. To compare the results obtained, we will use the results presented in [4,5].…”

“…At T≥700 K, a constant change in r (с-d condition, line 1) may be due to the appearance of new recombination centers speci c to localized traps. For example, at T~600÷700 K, oxygen atoms can diffuse to the surface, leading to the formation of various forms of silicon oxide (SiO х , Si у O х ) compounds on the surface of the silicon crystal [1][2][3][4][5][6][7][8][9][10][13][14][15].…”

“…At present, the electrophysical and photoelectric properties of polycrystalline silicon semiconductors in the eld when creating relatively inexpensive and resistant to external in uences semiconductor devices, solar cells, thermoelectric materials can be considered su ciently well studied from both experimental and theoretical points of view (see, for example, [1][2][3][4][5][6][7][8][9][10][11], as well as the links given there). It has been reliably established that the physical properties of polycrystalline silicon, which appear under certain conditions, depend on the area of the grain boundary of its volume.…”

“…It has been reliably established that the physical properties of polycrystalline silicon, which appear under certain conditions, depend on the area of the grain boundary of its volume. For example, localized traps or segregated impurity atoms in the grain boundary regions create a barrier effect that leads to shunting of the pn junction [1][2][3][4][5][6][7][8][9][10], and this simultaneously leads to a deterioration in the e ciency of semiconductor devices or solar cells. In this regard, one of the important tasks is the study of technologies for the development of polycrystalline semiconductor materials and the study of physical processes associated with grain boundary regions.…”