Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell

Saidov, M. S.; Abdurakhmanov, B. M.; Olimov, L. O.

doi:10.3103/s11949-007-4002-z

Cited by 5 publications

(11 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Expression (2) shows that an increase in Qi in the DC field (field 2) leads to an increase in , which in turn leads to an increase in . For example, in [4,5,[8][9][10], Т300350 К at Eip10,15 eV and Eip20,17 eV; Т383÷400 К at Eip30,36 eV; Т~400680 К at Eip30,3 eV it was found that the appearance of levels leads to an increase in PK . It has also been shown that the electrophysical and photoelectric properties of PK and the p-n structures derived from it depend on the concentration of localized traps at the Eip energy level.…”

Section: Electrophysical Properties Of Samplesmentioning

confidence: 99%

“…It is known that the physical properties of polycrystalline silicon (PC) based semiconductor devices or solar cells under certain conditions are explained by its microstructure and intergranular boundary (DCh) areas (e.g. [1][2][3][4][5][6][7][8][9][10], see also references given there). Studies have shown the potential for the production of relatively inexpensive and radiation-resistant solar cells or semiconductor devices as well as thermoelectric materials by controlling PC dimensional defects and introductory conditions in the DC field and charge transfer processes [1][2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electrophysical Properties of Two Structured Polycrystal Silicon

Olimov¹

2021

ijmra

View full text Add to dashboard Cite

The article first describes the results obtained in the study of the electrophysical and charge transfer processes of two structural polycrystalline silicon obtained by bonding silicon particles with sunlight. The results of the study show that the charge transfer processes in such structures are found to be different from each other. In particular, at T~300-800 K, a decrease in the surface area of both structures µ was observed, and the temperature dependence of p and n differed from each other. For example, (a) in the surface area T~300-350 K and T~600-710 K p increases and n decreases, at T~350-550 K p decreases and n increases. Conversely, the surface area of the sample (b) is characterized by an increase in p and a decrease in n at T≤575 K, a decrease in p in the later stages of temperature increase, and an increase in n.

show abstract

Section: Electrophysical Properties Of Samplesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrophysical Properties of Two Structured Polycrystal Silicon

Olimov¹

2021

ijmra

View full text Add to dashboard Cite

show abstract

“…At present, the electrophysical and photoelectric properties of polycrystalline silicon semiconductors in the eld when creating relatively inexpensive and resistant to external in uences semiconductor devices, solar cells, thermoelectric materials can be considered su ciently well studied from both experimental and theoretical points of view (see, for example, [1][2][3][4][5][6][7][8][9][10][11], as well as the links given there). It has been reliably established that the physical properties of polycrystalline silicon, which appear under certain conditions, depend on the area of the grain boundary of its volume.…”

Section: Introductionmentioning

confidence: 99%

“…It has been reliably established that the physical properties of polycrystalline silicon, which appear under certain conditions, depend on the area of the grain boundary of its volume. For example, localized traps or segregated impurity atoms in the grain boundary regions create a barrier effect that leads to shunting of the pn junction [1][2][3][4][5][6][7][8][9][10], and this simultaneously leads to a deterioration in the e ciency of semiconductor devices or solar cells. In this regard, one of the important tasks is the study of technologies for the development of polycrystalline semiconductor materials and the study of physical processes associated with grain boundary regions.…”

Section: Introductionmentioning

confidence: 99%

Some Electrophysical Properties of Polycrystalline Silicon Obtained in a Solar Oven

Olimov

Anarboyev

2022

Silicon

View full text Add to dashboard Cite

The article describes the results of the study of the microstructure and some electrophysical properties of silicon obtained by re-melting in a solar oven. It was found that the granularity of polycrystalline silicon consists of Si atoms with a size of 10-15 µm, the roughness of its surface. Decrease in speci c resistance at T≤600 K, increase in concentration of ionized input atoms and concentration of charge carriers, the position at Т∼600 ÷ 700 K is based on the decrease in the free path of the charge carriers as a result of thermal vibrations of the crystal lattice, the situation at T ≥ 700 K K was explained by the emergence of new recombination centers speci c to localized traps. Polycrystalline silicon heated by sunlight does not create a barrier effect of traps localized in the grain boundary regions from polycrystalline silicon obtained by other methods. This can expand the possibilities of creating highly e cient semiconductor devices, solar cells, thermoelectric materials for micro-and nanoelectronics, photovoltaics.

show abstract

“…It is known that the physical properties of polycrystalline silicon (PC) manifested under certain conditions only the specificity of PC and its structure and the relationship between the granular boundary (DC) field microstructure increase the interest in such materials. To date, several studies have been conducted to study the structure of the PK and the microstructure of the DCh (e.g., [1][2][3][4][5][6][7][8][9][10], see also the references given there). Various models and mechanisms have been proposed to explain the results obtained [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Microcructure of Polycrystal Silicon Heated by Sunlight

Olimov¹

2021

RAJAR

View full text Add to dashboard Cite

The article describes the method of obtaining polycrystalline silicon by combining silicon particles with sunlight, its microstructure and the mechanisms of formation of intergranular boundary areas. The results of the study show that the microstructure of the surface areas where sunlight falls (a) and does not fall (b) differs from each other. This is explained on the basis of the formation of temperature differences in the surface areas (a) and (b) for the uniform accumulation of silicon particles.

show abstract

Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell

Cited by 5 publications

References 3 publications

Electrophysical Properties of Two Structured Polycrystal Silicon

Electrophysical Properties of Two Structured Polycrystal Silicon

Some Electrophysical Properties of Polycrystalline Silicon Obtained in a Solar Oven

Microcructure of Polycrystal Silicon Heated by Sunlight

Contact Info

Product

Resources

About