Study of growth conditions of silicon carbide epitaxial layers

Saidov, M. S.; Shamuratov, Kh. A.; Kadyrov, Marsel

doi:10.1016/0022-0248(88)90099-1

Cited by 16 publications

(7 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because the rate of the chemical reaction C(s) + 2H 2 (g) → CH 4 (g) was lower than when hydrogen was used, the concentration of carbon on the film surface increased, resulting in enlargement of the ␣-SiC formation region. 16 Below 1000°C, the SiC films were composed mainly of the amorphous phase, whether the diluent gas was hydrogen or argon. Up to 1100°C, the as-deposited films exhibited similar XRD patterns, irrespective of the diluent gas used.…”

Section: Resultsmentioning

confidence: 99%

Effect of Diluent Gases on Growth Behavior and Characteristics of Chemically Vapor Deposited Silicon Carbide Films

Kim

Choi

1999

Journal of the American Ceramic Society

View full text Add to dashboard Cite

SiC films were chemically vapor deposited onto graphite substrates using methyltrichlorosilane (MTS, CH3SiCl3) as a source and argon or hydrogen as diluent gases to investigate the effect of each diluent gas on growth behavior and characteristics. Each diluent gas used had a relative difference in deposition rate within a certain temperature region. Such growth characteristics of the SiC films as preferred orientation, microstructure, and chemical composition varied remarkably with the diluent gas used. Microhardness and surface roughness were compared for SiC films prepared using the different diluent gases.

show abstract

Section: Resultsmentioning

confidence: 99%

Effect of Diluent Gases on Growth Behavior and Characteristics of Chemically Vapor Deposited Silicon Carbide Films

Kim

Choi

1999

Journal of the American Ceramic Society

View full text Add to dashboard Cite

show abstract

“…15,[22][23][24][25][26] An improvement of this situation can be achieved by a hydrogen etching procedure similar to a typical preparation step used before epitaxial SiC growth experiments. 27,28 When the sample is annealed in a quartz tube (e.g. in a CVD reactor) to 1500 • C under continuous H 2 gas flow at atmospheric pressure, a ( √ 3 × √ 3)R30 • LEED pattern with bright and sharp spots and practically no background is observed immediately after transfer of the sample into the UHV chamber without any further treatment (no HF dip, no outgassing).…”

Section: Silicate Monolayers Onmentioning

confidence: 99%

SiC SURFACE RECONSTRUCTION: RELEVANCY OF ATOMIC STRUCTURE FOR GROWTH TECHNOLOGY

et al. 1999

View full text Add to dashboard Cite

Growth of SiC wafer material, of heterostructures with alternating SiC crystal modifications (polytypes), and of oxide layers on SiC are of importance for potential electronic device applications. By investigation of hexagonal SiC surfaces the importance of atomic surface structure for control of the respective growth processes involved is elucidated. Different reconstruction phases prepared by ex situ hydrogen treatment or by Si deposition and annealing in vacuum were analyzed using scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED) crystallography. The extremely efficient dangling bond saturation of the SiC(0001)-(3×3) phase allows step flow growth for monocrystalline homoepitaxial layers. A switch to cubic layer stacking can be induced on hexagonal SiC(0001) samples when a ( √ 3 × √ 3)R30 • phase is prepared. This might serve as seed for polytype heterostructures. Finally, we succeeded in preparing an epitaxially well matching silicon oxide monolayer with ( √ 3 × √ 3)R30 • periodicity on both SiC (0001) and SiC (0001). This initial layer promises to facilitate low defect density oxide films for MOS devices.

show abstract

“…3 SiC coating etching can produce uncontrolled amounts of both Si and C in the gas phase, since Si may also etch preferentially from the coating. 4 SiC coating etching in the H 2 ambient was cited as the cause of Si island formation on SiC films grown on Si, 5 and the quality of the SiC coating on the graphite susceptor influenced the crystallinity and growth rate of SiC epilayers on Si. 6 Intentional and unintentional impurity incorporation in SiC epilayers can also be affected by the susceptor, since the C/Si ratio controls the impurity incorporation via site competition.…”

Section: Introductionmentioning

confidence: 99%

Susceptor effects on the morphological and impurity properties of 4H-SiC epilayers

Landini

2000

Journal of Elec Materi

View full text Add to dashboard Cite

The morphological and impurity properties of 4H-SiC epilayers grown using graphite susceptors coated with vitreous carbon, SiC, TaC, and NbC were compared. Metal carbide coated susceptors produced epilayers with smooth morphologies and no thick backside polycrystalline SiC deposition. Epilayers grown using metal carbide coated susceptors possessed more than 10 times higher intentional N 2 doping efficiencies and more than 10 times lower unintentional Al concentrations compared to epilayers grown using vitreous carbon coated susceptors. Metal carbide coated susceptors permitted doping control and abrupt p.n. junctions, and possessed more than 10 times longer lifetimes compared with vitreous carbon or SiC coated susceptors.

show abstract

Study of growth conditions of silicon carbide epitaxial layers

Cited by 16 publications

References 1 publication

Effect of Diluent Gases on Growth Behavior and Characteristics of Chemically Vapor Deposited Silicon Carbide Films

Effect of Diluent Gases on Growth Behavior and Characteristics of Chemically Vapor Deposited Silicon Carbide Films

SiC SURFACE RECONSTRUCTION: RELEVANCY OF ATOMIC STRUCTURE FOR GROWTH TECHNOLOGY

Susceptor effects on the morphological and impurity properties of 4H-SiC epilayers

Contact Info

Product

Resources

About