Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

“…4b, 5b, 6b, and 7b showing the semilog forward portions of current-voltage characteristics, we can see that an extended sublinear region appears after the exponential dependence on all currentvoltage characteristics, where the current slightly varies with increasing applied voltage (V > 2 V for n Si-p (Si 2 ) 1 -x -y (Ge 2 ) x (GaAs) y , V > 2.5 V for p Sin (Si 2 ) 1 -x (CdS) x , V > 1 V for n GaAs-p (InSb) 1 ⎯ x (Sn) x and n CdS-p CdTe heterostructures). This region can be well described within the above stated theory, i.e., the injection depletion effect (7).…”

“…Later, it was experimentally observed in semiconductor structures made of different materials, in particular, zinc doped silicon [2,3], gold doped sili con [4], gallium arsenide [5], silicon-germanium alloy [6], and others. In recent years, this effect was observed in structures fabricated based on different solid solu tions, in particular, n Si-p (Si 2 ) 1 -x -y (Ge 2 ) x (GaAs) y [7], p Si-n (Si 2 ) 1 -x (CdS) x [8], p Si-n (GaSb) 1 -x (Si 2 ) x [9], n GaAs-p (InSb) 1 -x (Sn 2 ) x [10], and structures with a CdS-CdTe heterojunction [11].…”

Physical foundations of the formation of the silicon-based heterovarizonic structure

“…This means that in this case the covalent bond in them will be predominant. Now the question arises whether all element atoms of III and V groups can form electrically neutral molecules and will they form new binary lattice cell in the silicon lattice Theoretically yes, but for this it is necessary that the following conditions are met [17,18].…”

Физические Основы Формирования Гетероваризонной Структуры На Основе Кремния

“…Теперь возникает вопрос все ли атомы элементов III и V групп могут образовывать электронейтральные молекулы и будут ли формировать новые бинарные элементарные ячейки в решетке кремния? Теоретически да, но при этом для этого необходимо чтобы выполнялись следующие условия [17,18].…”