Double injection currents in n–p–p+‐structures from Zn compensated silicon have been studied. It is found that the current‐voltage characteristic has the sublinear form: V ∝ ∝ exp (aIw). The distribution of the injected carrier concentration in p‐base region adjoining to p–p+‐junction exceeds their concentration at n+–p‐junction. Therefore the diffusion flux direction is opposite to the drift in the major part of the p‐base. In the bulk of the p‐base the injected carrier concentration decreases with the current increase at approaching the sublinear region of the current‐voltage characteristic. Experimental data are in good agreement with the theory of the double injection current in semiconductors with deep impurities.
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