Recombination in semiconductors with deep impurities

Leiderman, A. Yu.; Stel’makh, V. G.; Sadykov, M. F.

doi:10.3103/s0003701x08040105

Cited by 4 publications

(2 citation statements)

References 4 publications

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“…In [1], the attempt was made to summarize these models and obtain an expression for the recombination rate going through pair complexes. Similar models were also considered in [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

Leyderman¹,

Uteniyazov²,

Nsanbaev³

2020

SPQEO

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The recombination rate of non-equilibrium carriers has been calculated for the model of the semiconductor with donor-acceptor pairs, the recombination activity of which decreases during excitation. It has been shown that, even at a very low inertia of intracomplex exchange, this process can lead to decreasing the recombination rate. The obtained results demonstrate a principal distinction from the classical Shockley-Read statistics.

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“…In [1], the attempt was made to summarize these models and obtain an expression for the recombination rate going through pair complexes. Similar models were also considered in [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

Leyderman¹,

Uteniyazov²,

Nsanbaev³

2020

SPQEO

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“…In Leiderman, 2004Leiderman, , 2008 it has been shown theoretically that for development of processes of self-organization in semiconductors with deep impurities it is not enough simple change of recombination rate of non-equilibrium carriers. For that it is necessary to change of numbers of effectively working recombination centers.…”

Section: Introductionmentioning

confidence: 99%

About Possibility of Development Synergetic Processes in Semiconductors of Type AIIIBV

Leyderman¹,

Saidov²,

Khashaev³

et al. 2013

JMSR

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Possibility of development of processes of selforganization in the semiconductors of type A^IIIB^V grown up by Chohralsky method in which there are no single vacancies because all of them are combined in complexes of type shallow donor + vacancy has been shown. At small homogeneous heating of such samples these complexes break up and periodic distribution of vacancies along the sample appearances. Thus, internal isotype potential barriers are formed. Because of division of created by action of temperature the non-equilibrium carriers by these barriers synergetic current and (or) voltage generate. These theoretical ideas are confirmed by experiments on gallium arsenide doped by tellurium and gallium arsenide doped by tin

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Features of Liquid–Phase Epitaxy of (InSb)_1–z(Sn2)_z Solid Solutions of Molecular Substitution on GaAs and GaP Substrates

Usmonov¹,

Asatova

Akhmedov

2022

2022 International Conference on Information Science and Communications Technologies (ICISCT)

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Recombination in semiconductors with deep impurities

Cited by 4 publications

References 4 publications

Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

About Possibility of Development Synergetic Processes in Semiconductors of Type AIIIBV

Features of Liquid–Phase Epitaxy of (InSb)_1–z(Sn2)_z Solid Solutions of Molecular Substitution on GaAs and GaP Substrates

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Recombination in semiconductors with deep impurities

Cited by 4 publications

References 4 publications

Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

About Possibility of Development Synergetic Processes in Semiconductors of Type AIIIBV

Features of Liquid–Phase Epitaxy of (InSb)1–z(Sn2)z Solid Solutions of Molecular Substitution on GaAs and GaP Substrates

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Product

Resources

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Features of Liquid–Phase Epitaxy of (InSb)_1–z(Sn2)_z Solid Solutions of Molecular Substitution on GaAs and GaP Substrates