Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

Abstract

The recombination rate of non-equilibrium carriers has been calculated for the model of the semiconductor with donor-acceptor pairs, the recombination activity of which decreases during excitation. It has been shown that, even at a very low inertia of intracomplex exchange, this process can lead to decreasing the recombination rate. The obtained results demonstrate a principal distinction from the classical Shockley-Read statistics.