Effect of the grain boundaries on the conductivity and current transport in II–VI films

Razykov, T. M.; Karazhanov, Smagul; Leiderman, A. Yu.; Khusainova, N. F.; Kouchkarov, K.M.

doi:10.1016/j.solmat.2006.02.025

Cited by 23 publications

(8 citation statements)

References 9 publications

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“…This grain boundary region is highly disordered with large number of defect states due to incomplete atomic bonding or lack of stoichiometry. These states known as trap states act as effective carrier traps, impeding the flow of majority charge carriers between the grains [46]. The films deposited at higher temperatures are nearly stoichiometric and have larger grains.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Influence of substrate temperature on the materials properties of reactive DC magnetron sputtered Ti/TiN multilayered thin films

Subramanian

Ramadoss

Vidhya

et al. 2011

Materials Science and Engineering: B

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Section: Electrical Propertiesmentioning

confidence: 99%

Influence of substrate temperature on the materials properties of reactive DC magnetron sputtered Ti/TiN multilayered thin films

Subramanian

Ramadoss

Vidhya

et al. 2011

Materials Science and Engineering: B

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“…Nanostructured materials with small size and dimension exhibit unique and significantly improved physical, chemical and biological properties, phenomena and processes remarkable in comparison with their bulk counterparts, which demonstrate their great potential applications in many novel devices of the future. A major motivation to study II-VI semiconductor group materials is that they are direct-band-gap materials [1,2] with high optical absorption and emission coefficients. Materials based on thin films are the basic elements of sustained technological advances; they possess various unique properties due to their quantum confinement effects.…”

Section: Introductionmentioning

confidence: 99%

Effect of $$\hbox {Ar}^{+}$$ Ar + ion implantation on the properties of electrodeposited CdTe thin films

Goyal

Chauhan

2018

Bull Mater Sci

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Semiconducting nanomaterials of II-VI groups are the key elements of continued technological approaches made in the field of optoelectronic, magnetic and photonic devices due to their size-dependent properties. Ion beams create changes in the material along their track; this not only exhibits excellent properties but also tailors new materials. This article reports the effect of Ar + ion implantation on the properties of cadmium telluride thin films of about 80 nm thickness. The implantation parameters were adjusted based on computer-aided learning using SRIM (stopping and range of ions in matter) software. The CdTe thin films were deposited by electrodeposition method on ITO substrate. Thin films of CdTe are exposed to Ar + ions with different fluencies of 1 × 10 15 , 5 × 10 15 and 1 × 10 16 ions cm −2 at Ion Beam Centre, Kurukshetra University, Kurukshetra, India. After implantation, the films were characterized using UV-visible spectroscopy, photoluminescence (PL) and a four-probe setup with a programmable current-voltage (I-V) source metre. The scanning electron microscopy of pristine film showed smooth and uniform growth of sphere-shaped grains on substrate surface. From optical studies, the values of optical band gap for as-deposited and argon-ion-implanted thin films were calculated. It was found that values of optical band gap decreased with the increase in fluence of ion beam. From PL studies it was found that the intensity got increased with ion fluence. A considerable increase in current was noticed from I-V measurements with ion fluence after implantation. Different properties of pre-and post-implanted thin films are studied.

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“…The CdS layer was deposited on the CIGS layer by utilizing the chemical bath deposition (CBD) [25][26][27][28] and successively depositing the ZnO layer with the radio-frequency magnetron sputtering [29][30][31]. Then, a highly transparent ITO layer was deposited on the ZnO layer by using the direct current magnetron sputtering [32,33] to complete the 368 V, the current density sc is 31.87 mA/cm 2 , the fill factor FF is 34.57%, and the conversion efficiency is 4.05%.…”

Section: Photovoltaic Applicationsmentioning

confidence: 99%

Synthesis of Cu-Poor Copper-Indium-Gallium-Diselenide Nanoparticles by Solvothermal Route for Solar Cell Applications

Liu

Chang

Chuang

et al. 2014

International Journal of Photoenergy

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Copper-indium-gallium-diselenide (CIGS) thin films were fabricated using precursor nanoparticle ink and sintering technology. The precursor was a Cu-poor quaternary compound with constituent ratios ofCu/(In+Ga)=0.603,Ga/(In+Ga)=0.674, andSe/(Cu+In+Ga)=1.036. Cu-poor CIGS nanoparticles of chalcopyrite for solar cells were successfully synthesized using a relatively simple and convenient elemental solvothermal route. After a fixed reaction time of 36 h at 180°C, CIGS nanocrystals with diameters in the range of 20–70 nm were observed. The nanoparticle ink was fabricated by mixing CIGS nanoparticles, a solvent, and an organic polymer. Analytical results reveal that the Cu-poor CIGS absorption layer prepared from a nanoparticle-ink polymer by sintering has a chalcopyrite structure and a favorable composition. For this kind of sample, its mole ratio of Cu : In : Ga : Se is equal to 0.617 : 0.410 : 0.510 : 2.464 and related ratios ofGa/(In+Ga)andCu/(In+Ga)are 0.554 and 0.671, respectively. Under the condition of standard air mass 1.5 global illumination, the conversion efficiency of the solar cell fabricated by this kind of sample is 4.05%.

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Effect of the grain boundaries on the conductivity and current transport in II–VI films

Cited by 23 publications

References 9 publications

Influence of substrate temperature on the materials properties of reactive DC magnetron sputtered Ti/TiN multilayered thin films

Influence of substrate temperature on the materials properties of reactive DC magnetron sputtered Ti/TiN multilayered thin films

Effect of $$\hbox {Ar}^{+}$$ Ar + ion implantation on the properties of electrodeposited CdTe thin films

Synthesis of Cu-Poor Copper-Indium-Gallium-Diselenide Nanoparticles by Solvothermal Route for Solar Cell Applications

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