Influence of deep impurity levels on double injection in semiconductors

Double-injection currents in Zn-compensated silicon pin structures

“…Just in this part of the p-base region the nonequilibrium carrier concentration decreases with current growth while a t the injecting junctions it increases. I n the result the current varies sublinearly with voltage and in the I-U characteristic the "saturationyy sublinear region U oc exp ( l a w ) predicted in [9] appears. Notice, that the shift of the n(x) distribution minimum xmin towards the p-p+ junction with increasing current and its subsequent vanishing also agree with the theory [9].…”

“…x-is displayed. The diffusion opposite to the field di-rection2) (as it was shown in [ 9 ] ) leading to a decrease of carrier concentration n ( x ) in the bulk of the p-base with increasing current causes this remarkable saturation of the double injection I( U ) dependence. The double injection theory considers usually the case, when the diffusion direction coincides with the drift direction (i.e.…”

“…We are interested in the investigation of the double injection currents for such n+-p-p+-structures, where the electron concentration in the parts of the base region adjoining the p-pf junction, n ( w ) , exceeds their concentration at n+-p junction, n(0). In this case on the current-voltage characteristic of the rI-i-n structure between the two fairly extended quadratic regions I cc U 2 a sublinear region [9] where a I 0…”

“…According to [8] in the presence of deep impurities a particular composite drift-diffusion regime of the double injection exists when diffusion and drift contribute comparably to the current formation. At these special conditions the ambipolar drift mobility pa is controlled by variations in the occupation of deep traps [9].…”

“…The drift-diffusion composite regime of the double injection in p-i-n structures with the middle i-base region containing deep single level traps and recombination centres is treated theoretically in [9] for the case when the minority carrier lifetime is independent of the injection level (see e.g. [lo]).…”