Double injection currents in n–p–p+‐structures from Zn compensated silicon have been studied. It is found that the current‐voltage characteristic has the sublinear form: V ∝ ∝ exp (aIw). The distribution of the injected carrier concentration in p‐base region adjoining to p–p+‐junction exceeds their concentration at n+–p‐junction. Therefore the diffusion flux direction is opposite to the drift in the major part of the p‐base. In the bulk of the p‐base the injected carrier concentration decreases with the current increase at approaching the sublinear region of the current‐voltage characteristic. Experimental data are in good agreement with the theory of the double injection current in semiconductors with deep impurities.
The effect of impurity illumination generating majority current carriers on the characteristics of exclusion currents in compensated semiconductors with deep traps and non‐injecting contacts is examined theoretically. The distribution of carrier concentration and field in the base of the n+−n−n+ structure, the depletion region width and carrier concentration of both types near the contacts as functions of the illumination intensity, and the current‐voltage characteristics are studied. A decrease of carrier exclusion under action of such illumination is found and the value of the illumination intensity at which the exclusion effect has completely ceased is determined. The possibility is shown of a considerable increase of photosensitivity to impurity illumination for the case of a large quenching of the exclusion effect. Qualitative agreement between theoretical and experimental results is shown for n‐Ge 〈Sb, Cu〉 samples exactly compensated by copper.
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