Exclusion Effect in Semiconductors with Non-Injecting Contacts

Aronov, D. A.; Knigin, P. I.; Korolev, Yu. S.; Rubinov, V. V.

doi:10.1002/pssa.2210810102

Cited by 17 publications

(11 citation statements)

References 13 publications

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“…), probably due to the ionization of defect‐related deep levels and overheating of the electron gas . The S‐type IUC could also be explained by the “exclusion effects” that appear in structures containing n + –n and p + –n junctions. The effect is related to the depletion of both types of charge carriers and a high resistance of the near‐contact n + –n region when the hole injection from the p into the n region is low.…”

Section: Current–voltage Characteristicsmentioning

confidence: 99%

Influence of electron irradiation on p-n junctions in SiGe superlattices

Siahlo

Poklonski

Lastovski³

et al. 2014

Phys. Status Solidi B

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The influence of 3–4 MeV electron irradiation on the electrical properties of p–n junctions formed inside Si6Ge4 superlattices (SLs) has been studied. The current–voltage characteristics and capacitance–voltage (C–V) profiles have been measured in the temperature range from 4.2 to 300 K. Negative differential conductance (S‐type current–voltage characteristics) was observed at 77 K after irradiation. The carrier removal rate upon electron irradiation of the SiGe SL does not differ from that of a SiGe alloy with a comparable doping level, which is at variance with the formerly obtained data on a higher radiation hardness of the photoluminescence in similar SLs. We conclude that the radiation hardness is parameter‐specific: making a characteristic of a quantum‐size semiconductor structure more radiation tolerant does not mean the same improvement with respect to other parameters.

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Section: Current–voltage Characteristicsmentioning

confidence: 99%

Influence of electron irradiation on p-n junctions in SiGe superlattices

Siahlo

Poklonski

Lastovski³

et al. 2014

Phys. Status Solidi B

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“…It is known (see, e.g., 15 t o 71) that the majority carrier capture in compensated seniiconductors involves overcoming the Coulomb potential barrier a t a deep level. The barrier height decreases under the action of a sufficiently strong field E exceeding the critical value E,, the carrier trapping cross-section increases for this reason, and exactly this fact causes the decrease in carrier 1ifetime.The action of the field results in a decreased ratio of majority and minority carrier lifetimes, and consequently, in a worse fulfilment of the conditions necessary for the realization of a highly developed exclusion effect [2]. Physically, a decrease in the lifetime trio of majority carriers with increasing field means t h a t the rate of electron thermo-arid photogeneration from deep levels rises and, as a result, the exclusion effect becomes weaker under the action of field.…”

Section: Physical Prerequisities For Tho Theorymentioning

confidence: 99%

The Influence of Field-Induced Variation in Majority Carrier Lifetime Caused by Photostimulated Heating on Impurity Photoconductivity of Compensated Semiconductors with Exclusion

Aronov

Mamatkulov

1987

Phys. Stat. Sol. (a)

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Subject classification: 72.20 and 72.40; 73.40 S. V . Starodubtsev Physico-Tecknical Institute, Academy of Sciences of the Uzbekian SSR') ( a ) and V . I . Lenin State University (b), TashkentThe influence is theoretically studied of impurity illumination generated current carriers of both signs on the characteristics of the exclusion effect in a compensated semiconductor with deep centres. The action is considered under the conditions of photostimulated heating causing saturation of drift velocity and a decreased lifetime of the majority carriers. The influence is shown of the ifeld-induced decrease in lifetime on the distribution of the carrier concentration and field in the semiconductor, their values a t the excluding contact, the depletion layer length, the current-voltage characteristic (CVC), and the impurity photoconductivity (IPC). An explanation is first offered for a CVC including three regions (ohmic, sublinear with current saturation, and the second linear region in which the IPC is independent of the applied field) experimentally observed for a n nf-11-nf structure made of germanium with antimony impurity compensated with copper. TeopeTmYecKM mcnenosaHo ~o a j x e i i c~~~i e npmfecaoro ocBeqesm, r e~e p~p y~o u e r o Hocmem ToKa 0 6 0~1~ ~H~K O B , Ha xapamepac-rmm a @ @ e~~a ~I E C K J I I~~H H B IcoMneHcmpo-BaHHbIX IIoJIyJIpOBOjlHLlHaX C ~J I Y~O K H M G I UeHTpaMH. PaCCMOTpeHHe JIpOBeHeHO npl1 (POTO-CTElMYJIllpOBaHHOM nOJIeBOM pa3OrpeBe, BbI3bIBaH)IIfeM HacbIQeHMe npf%@OBOfi CHOPOCTl1 GI YMeHblueHGIe BpeMeHGI mGI3HH OCHOBHbIX HOCIlTeJIefi. &~CCJIeAOBaHO BJIWFIHMe 3 T O r 0 YMeHb-UleHHII BpeMeHGI mGI3HH Ha PaCIIpeneJIeHGIFI KOHUeHTPaqGIR HOCllTeJIefi GI IIOJIFI B IIOJly-IIpOBOAHIIKe, HX 3HaYeHGIFI Ha 3KCIEJII03MPYH)WeM KOHTaKTe, IIpOTHWeHHOCTb 06e)IHeHHorO CJIOII, BOJlbTaMnepHyIo XapaKTepHCTHKy ( B A S ) I4 ApllMecHyW @OTOnpOBO~GIMOcTb (nan). B panmax p a 3~~1~0 f i Teopm snepsbre o6'b~c1re~a ~a6nrojxasura~1c~ B s~c n e p~r~e~~e B nf-n-nf-cTpymype 113 repMaHnR c npHMecLm cypmm, KOMIIeIlCGIpoBaHHOt+ Menbm, BAX, conepxawan T~M yqacma: oMmeemii, ry6nvrHefiribrii c HaCbIWeHGIeM ToHa 11 BTOPOii JINHe~HbIfi, OTJIWIHhIfi OT OMH~leCHoro, Ha HOTOPOM n

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“…According to [5], the bipolar continuity equation for a wide range of variation in the impurity concentration Ni, (for definiteness, in donor concentration N D ) from the values corresponding to impurity conductivities greater than, equal to, or smaller than the intrinsic conductivity (ND 5 ni) to the values far smaller than it ( N , < mi), is of the form where D, and pa are the ambipolar diffusion factor and carrier drift mobility described…”

Section: Derivation Of a More General Distribution Of Current Carriermentioning

confidence: 99%

“…are the concentrations of electrons and holes, respectively, with exclusion; all other symbols are the same as in [5]. Since the exclusion effect is caused by the action of field [5], the first (diffusion) term of (1) is negligible as compared with the second (drift) one, and after using (5a) of [5] and provided D,(d2p/dx2) < paEj(dp/dx), the equation acquires the form + ND and where By integrating ( 2 ) we find the expression for the hole concentration in the basic n-semiconductor of length L,…”

Section: Derivation Of a More General Distribution Of Current Carriermentioning

confidence: 99%

The criteria of diffusionless solution validity in the theory of exclusion in “super-pure” semiconductors

Aronov

Mamatkulov

Rubinov

1985

phys. stat. sol. (a)

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The criteria of validity of the diffusionless solution previously obtained in the theory of the exclusion effect in “pure” semiconductors with non‐injecting contacts are determined and the conditions discussed of their realization. With this in view, a more general solution to the bipolar continuity equation is obtained for various relations between the residual impurity and intrinsic conductivities of a crystal. The distributions of current carrier concentration and field, the length of high‐level carrier depletion layer, and the characteristic length of exponential drop in the carrier concentration deficit are also found. It is shown that, despite of the considerable carrier concentration gradient in “super‐pure” semiconductors caused by exclusion, the neglect of carrier diffusion is practically justified in the whole base of the structure except a very thin layer near the depletion region boundary. It ascertains the existence of a minimum residual impurity concentration corresponding to the limit of satisfication of the quasi‐neutrality condition on which the theory is based, and determines its dependence on the material parameters and external excitation. The condition of equality of electron and hole lifetimes is also obtained. It is shown that the criteria found and valid in the case of “super‐pure” germanium.

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Exclusion Effect in Semiconductors with Non-Injecting Contacts

Cited by 17 publications

References 13 publications

Influence of electron irradiation on p-n junctions in SiGe superlattices

Influence of electron irradiation on p-n junctions in SiGe superlattices

The Influence of Field-Induced Variation in Majority Carrier Lifetime Caused by Photostimulated Heating on Impurity Photoconductivity of Compensated Semiconductors with Exclusion

The criteria of diffusionless solution validity in the theory of exclusion in “super-pure” semiconductors

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