Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

Abstract

crystallization onset temperature of the epitaxial layer was 1150°C, the solution-melt cooling rate was 1°C/min, and the solution-melt thickness was 1 mm. J J J

Effect of Introduction Layers of Native Oxide, InN, and InSb on the Electrical Characterization of the Au/n-InP

“…In forward bias, the log I(V) curve has two parts, the first linear part between 0 and 0.3 V, and a second part beyond 0.3 V which shows a curvature due to the influence of the series resistance. 4.59 [17] µn (cm 2 /V.s) 4000 [2] 4500 [16] 70000 [17] µp (cm 2 /V.s) 39 [19] 100 [16] 750 [20] Eg (eV) 0.7 [21] 1.35 [16] 0.17 [17] The ideality factor can be extracted from the slope of the linear region in the log(I)-V plot at low forward bias voltages. The slope is equal to the inverse of the ideality factor, which can be used to estimate the quality of the interface and the recombination mechanisms at play.…”