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Abstruct-In this paper, we investigate temperature dependence of breakdown voltage Ii,? from -40 to 110°C in separate absorption, grading, charge, and multiplication (SAGCM) InPnnGaAs avalanche photodiodes (APD's) with a range of device parameters. The experimental data shows that I/br is approximately a linear function of temperature, with a temperature coefficient qeXp between 0.13 and 0.16 V/"C. A physical model is developed and it demonstrates that I;,. indeed varies linearly with temperature with a temperature coefficient V t h e about 0.155 V P C . It also explains successfully the small variation of qeYp among the APD's. Good agreement between the physical model predictions and experimental data of published InP-based APD's is also obtained. This good agreement demonstrates that the proposed physical model is appropriate to model the temperature dependent characteristics in any InP-based APD's.

A novel planar separate absorption, charge sheet, grading and multiplication avalanche photodiode (APD) structure incorporating a partial charge sheet in the device periphery is described, which allows for straightforward fabrication of APD devices without the use of guard rings. Metalorganic chemical vapor deposition grown, Zn-diffused InP/InGaAs APD devices have been fabricated. High dc gains well in excess of 100 and a low primary dark current of 0.1 nA at 0.99 of the breakdown voltage VB have been measured for a 40-μm-diam device. The receiver sensitivity for a bit error rate of 10−9 at a bit rate of 400 Mbit/s was −41 dBm. The −3 dB electrical bandwidth was 2.5 GHz, and the gain-bandwidth product was 30 GHz.

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