Abstruct-In this paper, we investigate temperature dependence of breakdown voltage Ii,? from -40 to 110°C in separate absorption, grading, charge, and multiplication (SAGCM) InPnnGaAs avalanche photodiodes (APD's) with a range of device parameters. The experimental data shows that I/br is approximately a linear function of temperature, with a temperature coefficient qeXp between 0.13 and 0.16 V/"C. A physical model is developed and it demonstrates that I;,. indeed varies linearly with temperature with a temperature coefficient V t h e about 0.155 V P C . It also explains successfully the small variation of qeYp among the APD's. Good agreement between the physical model predictions and experimental data of published InP-based APD's is also obtained. This good agreement demonstrates that the proposed physical model is appropriate to model the temperature dependent characteristics in any InP-based APD's.
Rotor/seal full annular rub, including synchronous (forward) and reverse (backward) precessions, has been investigated both experimentally and analytically. Of particular interest is the finding of reverse precessional full annular rub (dry whip) that occurs repeatedly in small clearance cases without any outside disturbance. The experimental results include rub triggering mechanism, mass unbalance, and rotative speed effects. A simplified mathematical model is used to interpret experimental results. Nonlinear solutions for both synchronous and reverse precessions are obtained along with instability zones. Mass unbalance effect on shifting from synchronous response to reverse rub and destabilizing factors such as dry friction, rotor damping, and seal stiffness, are discussed.
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