Planar InP-InGaAs single-growth avalanche photodiodes with no guard rings

Tarof, L.E.; Bruce, Robert A.; Knight, D.G.; Yu, Jun; Kim, H.B.; Baird, T.

doi:10.1109/68.473488

Cited by 22 publications

(9 citation statements)

References 8 publications

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“…However, the consensus that planar structures are more reliable than mesa-type photodiodes spurred the development of planar configurations. Some of the techniques that have been successfully demonstrated utilize a lateral extended guard ring [18]- [20], floating guard rings [21]- [24], pre-etched charge sheet with regrowth [25], etched diffusion well [26], or selective ion implantation of the charge region [15]. Each of these approaches has been successful in suppressing an edge breakdown.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Telecommunications Avalanche Photodiodes

Campbell

2007

J. Lightwave Technol.

215

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For high-bit-rate long-haul fiber optic communications, the avalanche photodiode (APD) is frequently the photodetector of choice owing to its internal gain, which provides a sensitivity margin relative to PIN photodiodes. APDs can achieve 5-10-dB better sensitivity than PINs, provided that the multiplication noise is low and the gain-bandwidth product is sufficiently high. In the past decade, the performance of APDs for optical fiber communication systems has improved as a result of improvements in materials and the development of advanced device structures. This paper presents a brief review of APD fundamentals and describes some of the significant advances.

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Section: Introductionmentioning

confidence: 99%

Recent Advances in Telecommunications Avalanche Photodiodes

Campbell

2007

J. Lightwave Technol.

215

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“…Previous studies on avalanche photodiodes (APDs), which require a tighter design to make them reliable, have focused on how to confine the electric field into the central region of the device [7][8][9]. The basic idea for a device structure to confine the electric field in the center of the device is to form a selectively doped region at the undoped layer [10][11][12][13]. Figure 2a shows a representative APD structure using selective diffusion techniques.…”

Section: Inverted P-down Designmentioning

confidence: 99%

Inverted p-down Design for High-Speed Photodetectors

et al. 2021

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We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.

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“…Tarof [133] proposed an alternative design that utilizes a surface etch. This device is called the standoff APD.…”

Section: Performance Issuesmentioning

confidence: 99%

“…Instead, devices are made with charge sheets [131,132] or by etching [133] to form guard ring-free designs. APD devices that incorporate a charge sheet are referred to as separate absorption, grading, charge sheet, and multiplication APDs (SAGCM-APDs).…”

Section: Performance Issuesmentioning

confidence: 99%