Theoretical study of device sensitivity and gain saturation of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

ImprovedElectrical Performances of An InP/ InGaAs Heterojunction Bipolar Transistor

“…However, the ATLAS database does not integrate III-V semiconductor materials, therefore we based our work on the papers [6] [8] [9] for the parameters values cited in Table n°II In the simulation program of the HBT semiconductor component, we added the concentrationdependent analytical mobility referring to the Caughey and Thomas mobility model in order to consider the doping effect on electron and hole mobility in the semiconductor material. The known formula of the effective mobility of electrons and holes in each region is defined by the equation suggested by Caughey -Thomas [6] [10]:…”

Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode

“…The structure consists of a 1 µm heavily doped n-type InP buffer layer, a 1.5 µm lightly doped n-type InGaAs absorption layer and a 0.6 µm heavily doped p-type InP cap layer. A list of parameters used for the simulations is given in the Table 1 (Parks et al 1996).…”

Invited Review: Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance

“…APD devices that incorporate a charge sheet are referred to as separate absorption, grading, charge sheet, and multiplication APDs (SAGCM-APDs). Though the performance of these devices is only moderately sensitive to variations in device parameters [134], their growth requires a two-step process. The SAGCM-APD must be removed from the growth chamber and etched to form the charge sheet mesa.…”