Multiplication in separate absorption, grading, charge, and multiplication InP-InGaAs avalanche photodiodes

Ma, Cheng; Deen, M. Jamal; Tarof, L.E.

doi:10.1109/3.469291

Cited by 36 publications

(13 citation statements)

References 32 publications

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“…Previously, we have described in detail the analytical modeling of SAGCM APDs [2,17,18,19,20,21,22]. Here, we simply review results from the breakdown voltage modeling of both SAGCM and SAM APDs.…”

Section: Apd Modeling -Analyticalmentioning

confidence: 97%

<title>Photodetectors for fiber optic communication systems</title>

1999

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This paper presents an brief overview of some of the common high-speed and high-sensitivity photodetectors. These devices are the key components in long-haul, high bit-rate fiber optic communication systems. In this paper, while we describe several types of photodetectors, we concentrate on avalanche photodiodes since they are the current preferred candidates for high bit-rate long-haul fiber optic communication systems. We describe and compare some analytical and stochastic modeling results with experimental data and conclude with a discussion of some state-of-the-art results on photodetectors.

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Section: Apd Modeling -Analyticalmentioning

confidence: 97%

<title>Photodetectors for fiber optic communication systems</title>

1999

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“…The junction area of the diodes was 400 lm 9 400 lm. 2 The inset of Fig. 2 shows a schematic of the MBE-grown structure.…”

Section: Sample Growth and Fabricationmentioning

confidence: 99%

Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes

Ghosh

Mallick

Banerjee

et al. 2008

Journal of Elec Materi

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Mid-wavelength infrared (MWIR) p + -n --n + avalanche photodiodes (APDs) were fabricated using two materials systems, one with mercury cadmium telluride (HgCdTe) on a silicon (Si) substrate and the other with an indium arsenide/gallium antimonide (InAs/GaSb) strained layer superlattice (SLS). Diode characteristics, avalanche characteristics, and excess noise factors were measured for both sets of devices. Maximum zero-bias resistance times active area (R 0 A) of 3 9 10 6 X cm 2 and 1.1 9 10 6 X cm 2 and maximum multiplication gains of 1250 at -10 V and 1800 at -20 V were measured for the HgCdTe and the SLS, respectively, at 77 K. Gains reduce to 200 in either case at 120 K. Excess noise factors were almost constant with increasing gain and were measured in the range of 1 to 1.2.

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“…In InP/InGaAs APD employing thick InP multiplication and charge layers, the thickness of multiplication and charge layers are important factors to affect APD performance. To get optimal electric field in multiplication region, charge sheet density as high as 3.0 ×10 12 /cm 2 is required [2][3][4][5][6][7][8][9]. According to different process tolerance, different charge layer thickness and doping concentration has been designed to meet with the value of sheet charge density.…”

Section: Introductionmentioning

confidence: 99%

“…APD can achieve 5-10 dB higher sensitivity than PINs, provided that multiplication noise is low and the gain-bandwidth product of the APD is sufficiently high [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. In InP/InGaAs APD employing thick InP multiplication and charge layers, the thickness of multiplication and charge layers are important factors to affect APD performance.…”

Section: Introductionmentioning

confidence: 99%

Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers

Zhao

2007

Optoelectronic Materials and Devices II

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In this report, the multiplication characteristics of InP/InGaAs avalanche photodiode (APD) with thick multiplication and charge layer have been studied theoretically and experimentally, considering the electric field distribution, carrier concentration, and different multiplication layer thickness. We find that ionization in the charge layer is very sensitive to avalanche multiplication (M) and breakdown voltage (V br ). Partial ionization in the charge layer has been suggested, which gives a good description of experimental results.

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Multiplication in separate absorption, grading, charge, and multiplication InP-InGaAs avalanche photodiodes

Cited by 36 publications

References 32 publications

<title>Photodetectors for fiber optic communication systems</title>

<title>Photodetectors for fiber optic communication systems</title>

Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes

Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers

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