1998
DOI: 10.1109/3.663452
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A simplified approach to time-domain modeling of avalanche photodiodes

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Cited by 52 publications
(42 citation statements)
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“…Since and of most semiconductors become similar at high fields, the use of is appropriate. The current impulse response shows a slower decay when the effects of dead space are included, consistent with the earlier observations of Hayat et al [14] and Bandyopadhyay et al [15]. Pdf's of avalanche duration are compared in Fig.…”
Section: Random Response Time and Current Impulse Responsesupporting
confidence: 78%
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“…Since and of most semiconductors become similar at high fields, the use of is appropriate. The current impulse response shows a slower decay when the effects of dead space are included, consistent with the earlier observations of Hayat et al [14] and Bandyopadhyay et al [15]. Pdf's of avalanche duration are compared in Fig.…”
Section: Random Response Time and Current Impulse Responsesupporting
confidence: 78%
“…Hayat and Saleh [14] and Bandyopadhyay et al [15] found that for a given value of mean gain, the avalanche current decays more slowly as dead space increases. Using mean current impulse response and its standard deviation Hayat et al have also investigated the effects of dead space on the bit-error-rate of optical communication systems [16].…”
Section: Introductionmentioning
confidence: 99%
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“…However, the time domain modeling early developed and reported [22][23][24][25][26] has not yet give a detailed modeling of the performance dependences on this key parameter. In this work, performance dependences on multiplication layer thickness have been investigated by time domain modeling.…”
Section: Introductionmentioning
confidence: 99%
“…Many efforts have been devoted to the study of frequency response during the evolution of APD history [13][14][15][16][17][18][19][20][21][22] , among which a simplified approach for time domain modeling has been reported 22 . This approach 22 considered the statistical characteristics of the avalanche process with dead-space length effect 20,21 , and showed good agreement with experiments for the SAGCM InP/InGaAs APDs 22 . More recently, this approach has also been successfully used to model the two-dimensional gain (or responsivity) profiles 23,24 and temperature dependent performance characteristics 25,26 .…”
Section: Introductionmentioning
confidence: 99%