High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes

Tarof, L.E.; Yu, Jun; Bruce, Robert A.; Knight, D.G.; Baird, T.; Oosterbrink, B.

doi:10.1109/68.219706

Cited by 74 publications

(14 citation statements)

References 7 publications

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“…Since this ratio is a material property, for a given electric field, efforts to improve the APD performance have focused on optimizing the electric field profile and characterizing new materials. Recently, lower multiplication noise and higher gainbandwidth products have been achieved by sub micrometer scaling of the thickness of the multiplication region [4][5][6][7][8][9][10][11][12]. This is in direct contrast to what would have been predicted by the local-field model and is due to the nonlocal nature of impact ionization, which can be neglected if the thickness of the multiplication region is much greater than the "dead length", the distance over which carriers gain sufficient energy to impact ionize.…”

Section: Introductioncontrasting

confidence: 43%

“…The multiplication region of an APD plays a critical role in determining the gain, the multiplication noise, and the gain-bandwidth product. According to the localfield avalanche theory [1][2][3][4][5], both the multiplication noise and the gain-bandwidth product of APDs are determined by the ratio of the electron and hole ionization coefficients of the semiconductor in the multiplication region. Since this ratio is a material property, for a given electric field, efforts to improve the APD performance have focused on optimizing the electric field profile and characterizing new materials.…”

Section: Introductionmentioning

confidence: 99%

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Numerical Analysis of Homojunction Avalanche Photodiodes (Apds)

Seyedi¹

2008

PIER C

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Abstract-In this paper we introduce a rigorous numerical analysis to investigate the characteristics of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process in the wide range of multiplication region width. Also in our calculations the effects of dead space has been considered. Our analyses based on the history dependent multiplication theory (HDMT) and width independent ionization coefficient.

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Section: Introductioncontrasting

confidence: 43%

Section: Introductionmentioning

confidence: 99%

Numerical Analysis of Homojunction Avalanche Photodiodes (Apds)

Seyedi¹

2008

PIER C

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“…Instead, devices are made with charge sheets [131,132] or by etching [133] to form guard ring-free designs. APD devices that incorporate a charge sheet are referred to as separate absorption, grading, charge sheet, and multiplication APDs (SAGCM-APDs).…”

Section: Performance Issuesmentioning

confidence: 99%

Invited Review: Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance

Brennan

Haralson

2000

Superlattices and Microstructures

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“…This is the highest gain-bandwidth product reported for compound semiconductor APD's. For comparison, the best reported results for a MQW APD [29] and planar SAGM APD [30] are also shown in Fig. 9.…”

Section: High-performance Sacm Apdsmentioning

confidence: 99%

Performance of thin separate absorption, charge, and multiplication avalanche photodiodes

Anselm

Nie

et al. 1998

IEEE J. Quantum Electron.

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Abstract-Previously, it has been demonstrated that resonantcavity-enhanced separate-absorption-and-multiplication (SAM) avalanche photodiodes (APD's) can achieve high bandwidths and high gain-bandwidth products while maintaining good quantum efficiency. In this paper, we describe a GaAs-based resonant-cavity-enhanced SAM APD that utilizes a thin charge layer for improved control of the electric field profile. These devices have shown RC-limited bandwidths above 30 GHz at low gains and gain-bandwidth products as high as 290 GHz. In order to gain insight into the performance of these APD's, homojunction APD's with thin multiplication regions were studied. It was found that the gain and noise have a dependence on the width of the multiplication region that is not predicted by conventional models. Calculations using width-dependent ionization coefficients provide good fits to the measured results. These calculations indicate that the gain-bandwidth product depends strongly on the charge layer doping and on the multiplication layer thickness and, further, that even higher gain-bandwidth products can be achieved with optimized structures.

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High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes

Cited by 74 publications

References 7 publications

Numerical Analysis of Homojunction Avalanche Photodiodes (Apds)

Numerical Analysis of Homojunction Avalanche Photodiodes (Apds)

Invited Review: Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance

Performance of thin separate absorption, charge, and multiplication avalanche photodiodes

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