Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

Abstract

Abstruct-In this paper, we investigate temperature dependence of breakdown voltage Ii,? from -40 to 110°C in separate absorption, grading, charge, and multiplication (SAGCM) InPnnGaAs avalanche photodiodes (APD's) with a range of device parameters. The experimental data shows that I/br is approximately a linear function of temperature, with a temperature coefficient qeXp between 0.13 and 0.16 V/"C. A physical model is developed and it demonstrates that I;,. indeed varies linearly with temperature with a temperature coefficient V t h e about 0.155 V P C . It also explains successfully the small variation of qeYp among the APD's. Good agreement between the physical model predictions and experimental data of published InP-based APD's is also obtained. This good agreement demonstrates that the proposed physical model is appropriate to model the temperature dependent characteristics in any InP-based APD's.

Germanium Photodetector Technologies for Optical Communication Applications

“…Increasing the operating temperature from 23C to 90C has been shown to result in more than one order of magnitude increase in the dark current at a multiplication gain of 10. The extraction shows a δ value of 15mV/K, which is merely less than half of that obtained in a typical III-V based APD made of InP/InGaAs compound semiconductors (Ma et al, 1995). This makes Si a preferred material to meet the stringent requirement for thermal stability in APD receiver as it exhibits the least temperature sensitivity for breakdown voltage.…”

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