Photovoltages of nanoporous TiO2 solar cells sensitized by organic dyes are found to be improved by up to 200mV with a negligible decrease in photocurrent by treating TiO2 electrodes with intercalation of Li. The enhancement in photovoltage is explained in terms of the formation of a dipole layer due to adsorption of Li ions on the TiO2 surface generated by the reaction of intercalated Li atoms with moisture in air.

No abstract

No abstract

Articles you may be interested inFabrication of high resolution x-ray masks using diamond membrane for second generation x-ray lithography A new polyimide membrane for xray masks

No abstract

A double-layer pattern transfer technique has been developed for submicron aluminum patterning. The double-layer consists of an electron beam resist and an inorganic material ’’spacer’’ having high resistance to reactive ion etching of aluminum. When plasma-deposited silicon dioxide is used as a spacer, severe side-etch of aluminum occurs. On the other hand, by using plasma-deposited silicon nitride as a spacer, submicron aluminum patterns are formed without any etch bias. On profiled surfaces, aluminum patterns with 0.75 μm lines and 0.75 μm spaces are produced without linewidth variations due to the surface topography, by applying etch-back technique to the silicon nitride spacer before resist coating.

No abstract

Quarter micron gate low noise GaAs MESFET's have been developed by delineating gate electrodes with an electron beam lithography technique and by reducing parasitic source and gate resistances.At 18GHz, a noise figure of 1.9dB with an associated gain of 7dB and a maximum available gain of lldB were obtained at drain currents of lOmA and 3OmA, respectively. At 30GHz, a noise figure of 4dB with an associated gain of 5dB and a maximum available gain of 8dB were obtained. The measured noise figures are the best values reported so far, and this work has demonstrated the feasibility of utilizing GaAs MESFET'S up to millimeter-wave regions.