Submicron electron-beam patterning of aluminum by a double-layer pattern transfer technique

Sato, Mitsuyoshi; Kawabuchi, K.; Yoshimi, M.; Yamazaki, T.

doi:10.1116/1.571270

Cited by 5 publications

(3 citation statements)

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“…Transfer of the Si pattern to the underlying PMMA layer was performed either by flood exposure to deep u.v. radiation (200~260 nm) followed by development of the image pattern in orgarlic solvents, or by in situ RIE in an oxygen plasma (11)(12)(13)(14)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29). A typical process sequence is outlined below and is illustrated schematically in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…Sensitivity of the imaging process and definition of resist patterns could thus be enhanced independently, without sacrificing step coverage or aspect ratio . In twolayer systems (4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18), a thick resist film is first applied over the surface to cover vertical features and to planarize its topography. The thick layer is then overcoated with a thin resist film in which the image pattern is defined.…”

mentioning

confidence: 99%

“…Transfer of the top image pattern to the underlying thick layer has been accomplished by the use of solvents (7)(8)(9), selective developers (10,34,35), deep u.v. exposure and development (4,(15)(16)(17)(18), and by dry etching in an oxygen plasma (11)(12)(13)(14)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29).…”

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confidence: 99%

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A Three‐Layer Resist System for Deep U.V. and RIE Microlithography on Nonplanar Surfaces

Bassous

Ephrath

Pepper

et al. 1983

J. Electrochem. Soc.

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The three‐layer resist system AZ1350J/Si/PMMA was used to define high‐resolution patterns on nonplanar surfaces with topographical features typically encountered in the fabrication of VLSI circuits. The substrate was coated successively with a thick layer of polymethyl methacrylate (PMMA) for planarization, a thin layer of amorphous silicon for masking, and a thin AZ1350J resist layer in which the optical or electron beam exposed pattern was defined. Transfer of the resist image pattern into the amorphous silicon film was performed anisotropically by reactive ion etching (RIE) in a CF4 plasma. The pattern in the Si layer was then replicated in the underlying PMMA layer either by blanket deep u.v. exposure (200–300 nm) and solvent development or by in situ RIE in an O2 plasma. Both patterning techniques were comparable in defining submicrometer features in PMMA films 1–3 μm thick with good linewidth control and high aspect ratio over steps 1 μm high. Experimental details are described and the complexity of deep u.v. and RIE patterning techniques are discussed with particular emphasis on the planarizing characteristics of PMMA.

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