Channel-implant dose dependence of hot-carrier generation and injection in submicrometer buried-channel PMOSFET's

Kawabuchi, K.; Yoshimi, M.; Wada, T.; Takahashi, Masanori; Numata, K.

doi:10.1109/t-ed.1985.22180

Cited by 8 publications

(4 citation statements)

References 2 publications

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“…Drain, substrate, and gate current models, which are valid in the subthreshold region, should be used to model the electron substrate and gate currents at low jV GS j. Figure 6 shows the measured 20) and modeled drain, electron substrate, and electron gate currents with one set of parameters. The BC pMOSFET with L=W ¼ 0:9=19 mm is biased at jV DS j ¼ 6 V. The gate-oxide thickness, junction depth, and substrate doping are 16 nm, 0.25 mm, and 5 Â 10 15 cm À3 , respectively.…”

Section: Resultsmentioning

confidence: 99%

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New Compact and Time-Efficient Reliability Physics Model for p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Sheu

2010

Jpn. J. Appl. Phys.

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In this paper, we present a new compact and time-efficient reliability physics model of drain, substrate, and gate currents for p-type metal–oxide–semiconductor field-effect transistors (pMOSFETs). The pre-stress drain current and channel electric field are first calculated, and the spatial distribution of electron temperature along the channel is then derived using a simplified energy balance equation. Having calculated the nonlocal impact ionization coefficient and electron temperature, and modified the lucky-electron concept, the nonlocal electron substrate and gate currents can be derived. We use an oxide-trapping mechanism for calculating the spatial distribution of oxide-trapping charges, which are substituted into the damaged pMOSFETs drain current model; then we can model the hot-carrier-damaged drain current. This model is a time-saving computer-aided-design (CAD) model and is physics transparent for pMOSFETs.

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Section: Resultsmentioning

confidence: 99%

“…Fig.6. (Color online) Modeled and measured20) drain, substrate, and gate currents in BC pMOSFET as functions of drain and gate voltages with L=W ¼ 0:9=19 mm and t ox ¼ 16 nm.…”

mentioning

confidence: 99%

New Compact and Time-Efficient Reliability Physics Model for p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Sheu

2010

Jpn. J. Appl. Phys.

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“…6. Modeled and measured 13) drain, substrate, and gate currents in a BC pMOSFET as a function of drain and gate voltage with L=W ¼ 0:9=19 mm and t ox ¼ 16 nm.…”

Section: Discussionmentioning

confidence: 99%

“…Drain, substrate, and gate current models, which are valid in the subthreshold region, should be used to model the electron substrate and gate currents at low jV GS j. Figure 6 shows the measured 13) and modeled drain, electron substrate, and electron gate currents with one set of parameters. The BC pMOSFET has L=W ¼ 0:9=19 mm and is biased at jV DS j ¼ 6 V. The gate-oxide thickness, junction depth, and substrate doping are 16 nm, 0.25 mm, and 5 Â 10 15 cm À3 , respectively.…”

Section: Substrate and Gate Currentmentioning

confidence: 99%

Electron Substrate and Gate Current Modeling for Single-Drain Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect Transistors Including Tunneling Mechanisms

Sheu¹

2008

jjap

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A model of nonlocal electron substrate and gate currents is presented for single-drain (SD) buried-channel (BC) p-type metaloxide-semiconductor field-effect transistors (pMOSFETs). A nonlocal impact ionization coefficient with characteristic length dependence both in the exponential term and the pre-exponential factor is used in the electron substrate current model. The gate current model is developed by originating a modified lucky electron concept that includes quantum-mechanical tunneling effects in parallel. The channel electric field is first calculated by using an analytical pseudo-two-dimensional MOSFET model, and the spatial distribution of electron temperature along the channel is then derived using a simplified energy balance equation. Having calculated the nonlocal impact ionization coefficient and electron temperature, and modified the lucky electron concept, the nonlocal electron substrate and gate currents can be derived. This model is a time-saving computeraided-design (CAD) model and is physics transparent for SD BC pMOSFETs.

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Hot-carrier effects in depletion-mode MOSFETs

Ong¹,

Ko²,

Hu³

1989

Solid-State Electronics

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Channel-implant dose dependence of hot-carrier generation and injection in submicrometer buried-channel PMOSFET's

Cited by 8 publications

References 2 publications

New Compact and Time-Efficient Reliability Physics Model for p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

New Compact and Time-Efficient Reliability Physics Model for p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Electron Substrate and Gate Current Modeling for Single-Drain Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect Transistors Including Tunneling Mechanisms

Hot-carrier effects in depletion-mode MOSFETs

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