Abstract:In this paper, we present a new compact and time-efficient reliability physics model of drain, substrate, and gate currents for p-type metal–oxide–semiconductor field-effect transistors (pMOSFETs). The pre-stress drain current and channel electric field are first calculated, and the spatial distribution of electron temperature along the channel is then derived using a simplified energy balance equation. Having calculated the nonlocal impact ionization coefficient and electron temperature, and modified the luck… Show more
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