New Compact and Time-Efficient Reliability Physics Model for p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Abstract

In this paper, we present a new compact and time-efficient reliability physics model of drain, substrate, and gate currents for p-type metal–oxide–semiconductor field-effect transistors (pMOSFETs). The pre-stress drain current and channel electric field are first calculated, and the spatial distribution of electron temperature along the channel is then derived using a simplified energy balance equation. Having calculated the nonlocal impact ionization coefficient and electron temperature, and modified the lucky-electron concept, the nonlocal electron substrate and gate currents can be derived. We use an oxide-trapping mechanism for calculating the spatial distribution of oxide-trapping charges, which are substituted into the damaged pMOSFETs drain current model; then we can model the hot-carrier-damaged drain current. This model is a time-saving computer-aided-design (CAD) model and is physics transparent for pMOSFETs.