Electron Substrate and Gate Current Modeling for Single-Drain Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect Transistors Including Tunneling Mechanisms
Abstract:A model of nonlocal electron substrate and gate currents is presented for single-drain (SD) buried-channel (BC) p-type metaloxide-semiconductor field-effect transistors (pMOSFETs). A nonlocal impact ionization coefficient with characteristic length dependence both in the exponential term and the pre-exponential factor is used in the electron substrate current model. The gate current model is developed by originating a modified lucky electron concept that includes quantum-mechanical tunneling effects in paralle… Show more
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