Quarter micron gate low noise GaAsFET's operable up to 30 GHz

Abstract

Quarter micron gate low noise GaAs MESFET's have been developed by delineating gate electrodes with an electron beam lithography technique and by reducing parasitic source and gate resistances.At 18GHz, a noise figure of 1.9dB with an associated gain of 7dB and a maximum available gain of lldB were obtained at drain currents of lOmA and 3OmA, respectively. At 30GHz, a noise figure of 4dB with an associated gain of 5dB and a maximum available gain of 8dB were obtained. The measured noise figures are the best values reported so far, and this work has demonstrated the feasibility of utilizing GaAs MESFET'S up to millimeter-wave regions.

A Review of GaAs MESFET Gate Electrode Fabrication Technologies

“…In one of the earliest reports, Butlin et al (26) fabricated 0.3 ~m gate MESFET's with a single layer of PMMA. A single layer of AZ2415 (6000A thick) was used to fabricate 0.25 ~m gate FET's, which operated up to 30 GHz (27). One-third micron gates have been fabricated with a triple layer PMMA/A1/PMMA structure.…”