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The electrical transport characteristics of a Au/n-Si metal-semiconductor Schottky barrier junction under exposure to 60 Co gamma rays have been reported in this paper. The role of energy loss mechanisms in the Schottky junction due to gamma irradiation is studied using the current-voltage (I−V ) and capacitance-voltage (C−V ) measurements. The electrical characteristics were measured at various doses of gamma by incrementally increasing the exposure from 0.85 Mrad (Si) to 340 Mrad (Si) to systematically study the dose effects on electrical transport across the Schottky interface. After irradiation, the ideality factor was found to decrease initially up to a dose of 17 Mrad (Si), and thereafter, it started increasing. At a dose of 340 Mrad (Si), the characteristics of the Schottky interface were found to recover toward the pristine characteristics. The recovery effect is attributed to annealing of interface defects due to the electronic energy loss S e of gamma ray photons.Index Terms-Defect annealing, gamma irradiation, I-V and C-V characteristics, Schottky barrier interface.

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The total dose effects of 1 MeV electrons on the dc electrical characteristics of silicon NPN transistors are investigated in the dose range from 100 krad to 100 Mrad. The different electrical characteristics such as Gummel characteristics, excess base current ( I B ), dc current gain (h FE ), transconductance (g m ), displacement damage factor (K) and output characteristics were studied in situ as a function of total dose. A considerable increase in base current (I B ) and a decrease in h FE , g m and I CSat was observed after 1 MeV electron irradiation. The collector-base (C-B) junction capacitance of transistors was measured to estimate the change in the effective carrier concentration. After 1 MeV electron irradiation, a considerable degradation in capacitance was observed. The plot of (1/C 2 ) versus voltage shows that the effective carrier concentration and built-in voltage (V bi ) increase marginally upon 1 MeV electron irradiation. The results of 1 MeV electron irradiation were compared with 1 MeV proton and Co-60 gamma irradiation results in the same dose range. The degradation for 1 MeV electron and Co-60 gamma-irradiated transistors was significantly less when compared to 1 MeV proton-irradiated transistor. The 1 MeV proton, 1 MeV electron and Co-60 gamma-irradiated transistors were subjected to isochronal annealing to analyze the recovery of the electrical parameters. ARTICLE HISTORY