Application of a Pelletron accelerator to study total dose radiation effects on 50GHz SiGe HBTs

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

“…As reported in Refs. [14]- [16], the swift heavy ions can produce ionization damages and displacement damages in the transistors, simultaneously. Ionization damages create some positive oxide trapped charges and interface states around the EB spacer oxide layer, which act as generation-recombination (G-R) centers and increase the base surface recombination current in the low V BE region.…”

“…[3] Though there have been many reports on single event effects by utilizing the high energy heavy ions, few data are available about the total dose effects of high-energy heavy ions on SiGe HBTs up to now. [15,16] Besides, compared to proton or 60 Co facilities, heavy ion irradiation only needs a relatively shorter time to obtain the same dose level, which is suitable for the assessment of device degradation under a high dose level (such as 1 MGy in LHC). [16] Therefore, studies on the total dose effects of swift heavy ions on SiGe HBTs are of interest.…”

“…[15,16] Besides, compared to proton or 60 Co facilities, heavy ion irradiation only needs a relatively shorter time to obtain the same dose level, which is suitable for the assessment of device degradation under a high dose level (such as 1 MGy in LHC). [16] Therefore, studies on the total dose effects of swift heavy ions on SiGe HBTs are of interest.…”

3D Simulation Study on the Mechanism of Influence Factor of Total Dose Ionizing Effect on SiGe HBT

“…月球-180℃～+120℃的典型极端宽温范围内，SiGe 器件使相关航天探测设备具 备去掉庞大保温装置的可能，进而降低发射成本 [4][5] 。因此，不同于传统设计中 无源器件作为舱外设备的主流，SiGe HBT 具备了有源器件舱外应用的可能性， 能够显著提高平台的有效载荷质量， 实现信息获取、 处 理 与传输能力的大幅提升。 同时，SiGe HBT 利用能带工程，在增益、频响特性、噪声和线性度等方面都表 现出优异的电学性能；其还与 Si CMOS 工艺具有良好的兼容性，对于不同电路 应用具有很强的适用性，成为空间极端环境应用中的有力竞争者之一 [6][7] 。 然而， 工作于空间辐射环境中的电子系统不可避免的要遭受电离辐射的影响。 尤其当器件应用于卫星壳体外部时，短时间内遭受的粒子辐射急剧增加，电离辐 射总剂量效应成为不可忽视的损伤因素。在 SiGe HBT 实现商业量产之后，针对 其的总剂量效应实验研究工作也随之展开，结果表明 SiGe HBT 抗总剂量效应能 力要强于传统 Si BJT，但早期研究的实验环节设计较为简单，多采用浮空辐照的 实验条件，对其辐照后的损伤机制仍采用传统 BJT 正向电学特性的方法进行分 析，不同氧化层中辐射诱发不同缺陷的影响也鲜有报道 [8][9][10][11][12] ；另一方面，由于总 剂量效应作用机理目前尚未形成统一的认识， 其计算机数值仿真并不像单粒子效 应一样具有完善的模型，基于数值仿真的 SiGe HBT 总剂量效应机理分析报道较 少 [13][14] [13][14][15][16] 与 SiNPN 双极晶体管相似，SiGe HBT 辐照后电学性能的退化主要是由基极…”

Tribogenerators

“…The newer Pelletron generators were made of chains of metal pellets, joined by insulating nylon links, that are charged by induction [15] dispensing with the rubbing contacts or corona discharges used in Van de Graaff generators. Pelletron generators reach 25 million volts, producing highly uniform ion beams [16] and they have been used for producing secondary beams of unstable nuclei [17], to investigate silicon-germanium heterojunction bipolar transistors (SiGe HBTs) [18] and other applications of ion beam interactions with materials and atoms.…”