<i>In situ</i>investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon–germanium heterojunction bipolar transistors

Praveen, K. C.; Pushpa, N.; Naik, P. S.; Cressler, John D.; Shiva, H. B.; Verma, Shailendra Kumar; Tripathi, A.; Prakash, A. P. Gnana

doi:10.1080/10420150.2013.787073

Cited by 7 publications

(5 citation statements)

References 6 publications

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“…These G/R traps increase the I B by generation-recombination process and hence the I B increases at lower V BE [32]. Inverse-mode Gummel characteristics for 50 MeV Li 3+ ion irradiated SiGe HBT [37].…”

Section: Solid State Phenomena Vol 239mentioning

confidence: 97%

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Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices

Prakash

Pushpa²

2015

SSP

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Silicon bipolar junction transistors (BJTs), Silicon-germanium heterojunction bipolar transistors (SiGe HBTs) and metal oxide semiconductor (MOS) devices are the key components of BiCMOS integrated circuits. The semiconductor devices need to withstand very high total doses (100’s of Mrad) for reliable operation of electronic circuits for 8-10 years of LHC operation. The study of radiation tolerance of semiconductor devices up to 100 Mrad of total dose takes longer time with conventional 60Co gamma, proton and electron irradiation facilities and the effects due to these radiations are well understood. Hence it is important to study the effects of heavy ion irradiation on various semiconductor devices. The irradiation time decreases with increasing linear energy transfer (LET) of incident radiation and LET increases with atomic number of the impinging ions. But it is essential to understand the mechanism of energy transfer by different heavy ions in semiconductor devices. Therefore, here we give an overview of different heavy ion interactions with Si BJTs, MOSFETs and SiGe HBTs by primarily focusing on the electrical characteristics of these devices before and after ion irradiation. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

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Section: Solid State Phenomena Vol 239mentioning

confidence: 97%

“…The increase in ΔI B is more for O 7+ ion irradiated SiGe HBT when compared to B 5+ ion irradiated SiGe HBT. The area of STI oxide is more than E-B spacer oxide and hence more inverse mode ΔI B is observed when compared to forward mode ΔI B [37].…”

Section: Solid State Phenomena Vol 239mentioning

confidence: 99%

Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices

Prakash

Pushpa²

2015

SSP

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“…The set of in situ property test methods with the longest history have been electrical in nature. Such electrical-based probes can be used to directly measure the performance of semiconducting materials and devices [106][107][108] or to indirectly use characteristics such as resistivity to infer irradiationdriven changes in microstructure, phase, etc. [109][110][111] More recently, laser-based photoacoustic techniques have been deployed to measure thermoelastic properties directly during ion irradiation.…”

Section: In Situ Properties Characterization Toolsmentioning

confidence: 99%

“…The evolution of electronic materials under irradiation can be used to validate device performance under simulated operational environments or determine when properties are precisely tuned for the desired application. Deploying in situ resistivity and I-V curve monitoring tools offers the opportunity to probe the dynamics of electronic device failure, 107 monitor phase transformations in complex materials, 123 or identify critical doses resulting in changes in superconductivity. 109 Through in situ monitoring of I-V curves, device performance or tailoring of electronic barriers can be interrogated.…”

Section: In Situ Electrical Property Characterizationmentioning

confidence: 99%

“…106 Praveen et al studied the effects of ion irradiation of Si-Ge transistors to show that oxygen irradiation induced more degradation of device performance than boron irradiation. 107 Tracking resistivity can also offer a non-destructive evaluation of material changes under irradiation, through defect introductions or phase changes. The dynamic evolution of resistivity of GaAs and Si crystals under ion irradiation has been tracked in situ to decipher the effects of electronic and nuclear stopping.…”

Section: In Situ Electrical Property Characterizationmentioning

confidence: 99%

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The In Situ Ion Irradiation Toolbox: Time-Resolved Structure and Property Measurements

Lang

Dennett

Madden

et al. 2021

JOM

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The dynamic interactions of ions with matter drive a host of complex evolution mechanisms, requiring monitoring on short spatial and temporal scales to gain a full picture of a material response. Understanding the evolution of materials under ion irradiation and displacement damage is vital for many fields, including semiconductor processing, nuclear reactors, and space systems. Despite materials in service having a dynamic response to radiation damage, typical characterization is performed post-irradiation, washing out all information from transient processes. Characterizing active processes in situ during irradiation allows the mechanisms at play during the dynamic ion-material interaction process to be deciphered. In this review, we examine the in situ characterization techniques utilized for examining material structure, composition, and property evolution under ion irradiation. Covering analyses of microstructure, surface composition, and material properties, this work offers a perspective on the recent advances in methods for in situ monitoring of materials under ion irradiation, including a future outlook examining the role of complementary and combined characterization techniques in understanding dynamic materials evolution.

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A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT

Praveen

Pushpa²,

Bharathi

et al. 2014

Physics of Semiconductor Devices

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In situinvestigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon–germanium heterojunction bipolar transistors

Cited by 7 publications

References 6 publications

Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices

Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices

The In Situ Ion Irradiation Toolbox: Time-Resolved Structure and Property Measurements

A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT

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