Application of advanced 200GHz Si–Ge HBTs for high dose radiation environments

Praveen, K. C.; Pushpa, N.; Rao, Yandi; Govindaraj, G.; Cressler, John D.; Prakash, A. P. Gnana

doi:10.1016/j.sse.2010.08.003

Cited by 20 publications

(4 citation statements)

References 18 publications

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“…In case of transistors, the high energy ion induced defects increases the generation-recombination (G/R) current in addition to defects leads to the degradation of minority carrier lifetime and in turn degrades the current gain of the transistors [13]. The schematic cross section of SiGe HBT is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors

Vinayakprasanna¹,

Praveen²,

Pushpa³

et al. 2015

Adv. Mater. Lett.

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The total dose effects of 80 MeV carbon ions and 60 Co gamma radiation in the dose range from 1 Mrad to 100 Mrad on advanced 200 GHz Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) are investigated. The stopping and range of ions in matter (SRIM) simulation study was conducted to understand the energy loss of 80 MeV carbon ions in SiGe HBT structure. Pre-and post-radiation DC figure of merits such as Gummel characteristics, excess base current, ideality factor, DC current gain, damage constant, neutral base recombination, avalanche multiplication of carriers and output characteristics were used to quantify the radiation tolerance of the devices. The excess base current, current gain and damage constant for 80 MeV carbon irradiated SiGe HBTs show more degradation when compared to 60 Co gamma irradiation. The ideality factor for 80 MeV carbon ions irradiated SiGe HBTs is also more when compared to 60 Co gamma irradiated SiGe HBTs. The SiGe HBTs shows minimal degradation in current gain at collector current levels (~ 1 mA) where the circuits are biased even after 100 Mrad of total dose. Therefore SiGe HBTs are became the reliable candidate for deep space exploration programs and high energy physics experiments (HEP) like large hadron colliders (LHCs).

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Section: Resultsmentioning

confidence: 99%

80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors

Vinayakprasanna¹,

Praveen²,

Pushpa³

et al. 2015

Adv. Mater. Lett.

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“…To do that, we plot the base current at zero bias versus dose and obtain ‫ܫ‬ ௦௦௫ =2.5·10 -14 and ݇ ௦ =5.5·10 -8 . To determine the parameters K d , n es , we also need to solve the system of equations similar to (5) and (6). There obtained values are K d =1,6·10 -6 and n es =2.01.…”

Section: Models That Take Into Account the Impact Of Gamma Radiationmentioning

confidence: 99%

SPICE model parameters extraction taking into account the ionizing radiation effects

Petrosyants

Kozhukhov

2014

Proceedings of IEEE East-West Design &Amp; Test Symposium (EWDTS 2014)

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Universal SPICE macro-model of Si bipolar junction transistor (BJT) and SiGe heterojunction bipolar transistor (HBT) taking into account total irradiation dose effects is presented. A method of macro-modelradiation-dependent parameters extraction from the measured data is described. The advantage of the proposed method is simplicity of parameter definition. Simulated and measured transistor characteristics are in a good agreement.

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“…[1,2] Particularly, SiGe HBT can operate in extreme environment (−180 • C∼ +200 • C) especially at cryogenic temperature because of the band gap gradient of the base region. [3][4][5] Therefore, SiGe HBTs as active devices are possibly used outside the spacecraft, so that the volume and weight of the electronic system and launch costs will be greatly reduced. [6] The SiGe HBT has become a potential competitor in the space field.…”

Section: Introductionmentioning

confidence: 99%

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

et al. 2018

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The synergistic effect of total ionizing dose (TID) on single event effect (SEE) in SiGe heterojunction bipolar transistor (HBT) is investigated in a series of experiments. The SiGe HBTs after being exposed to 60 Co γ irradiation are struck by pulsed laser to simulate SEE. The SEE transient currents and collected charges of the un-irradiated device are compared with those of the devices which are irradiated at high and low dose rate with various biases. The results show that the SEE damage to un-irradiated device is more serious than that to irradiated SiGe HBT at a low applied voltage of laser test. In addition, the γ irradiations at forward and all-grounded bias have an obvious influence on SEE in the SiGe HBT, but the synergistic effect after cutting off the γ irradiation is not significant. The influence of positive oxide-trap charges induced by TID on the distortion of electric field in SEE is the major factor of the synergistic effect. Moreover, the recombination of interface traps also plays a role in charge collection.

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Application of advanced 200GHz Si–Ge HBTs for high dose radiation environments

Cited by 20 publications

References 18 publications

80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors

80 MeV Carbon Ion Irradiation Effects On Advanced 200 GHz Silicon-germanium Heterojunction Bipolar Transitors

SPICE model parameters extraction taking into account the ionizing radiation effects

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

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