SPICE model parameters extraction taking into account the ionizing radiation effects

Petrosyants, Konstantin O.; Kozhukhov, Maxim V.

doi:10.1109/ewdts.2014.7027055

Cited by 3 publications

(2 citation statements)

References 7 publications

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“…Lawal O M et al discussed the Simulation Program with Integrated Circuit Emphasis (SPICE) model parameters of a pre-and post-irradiated silicon bipolar junction transistor (Si BJT) [15]. Petrosyants K et al explored the SPICE model of a Si BJTs and silicon germanium (SiGe) hetero-junction bipolar transistor (HBTs), taking into account the total irradiation dose effects with gamma-ray, proton, neutron, and electron irradiation [16][17][18]. Van Uffelen M et al studied the direct current (DC) characteristics of SiGe HBTs at gamma doses of up to 4 MGy using the SPICE model [19].…”

Section: Introductionmentioning

confidence: 99%

Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation

Zhao,

Wang,

Zhang

et al. 2024

Electronics

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The degradation properties of Indium phosphide hetero-junction bipolar transistors (InP HBTs) under proton irradiation are studied and modelled using a compact model for pre-irradiation, post-irradiation, and post-annealing. The variation rates of the model parameters, such as the base–emitter saturation current (ISE) and ideality factor in the ideal region (NE) in the forward Gummel characteristics, the zero-biased capacitance (Cje) and the grading factor (Mjer) in the BE junction capacitance, and the transit time parameter in the base region (Tfb), are analysed to delve into the degradation mechanism induced by proton irradiation. The displacement damage, induced by proton irradiation in the space charge region of the base–emitter junction and in the quasi-neutral bulk base region, is found to be responsible for the decrease in current gain and cut-off frequency. After annealing, the variation rates of the parameters decrease significantly compared to post-irradiation. This suggests that the recombination of unstable defects leads to a slight recovery in the degradation characteristics of InP HBTs after a period of annealing.

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Section: Introductionmentioning

confidence: 99%

Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation

Zhao,

Wang,

Zhang

et al. 2024

Electronics

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“…The SPICE model of BJTs under total ionization dose (TID) effects has being extracted for low, middle and large current regimes with respect to forward-bias parameters based on standard measurement tests 6 and also to a gamma total dose of 10 Mrad(Si) in irradiated InGaP/GaAs SHBTs. 4 However, studies on SPICE model extraction of gamma irradiated Si BJT at different dose levels and full descriptions of the affected parameters particularly reverse-bias are still little and open for further investigation.…”

mentioning

confidence: 99%

Extraction and Analysis of Gamma Irradiated Si BJT SPICE Model

Lawal¹,

Liu²,

Huang³

2019

ECS J. Solid State Sci. Technol.

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The Simulation Program with Integrated Circuit Emphasis (SPICE) model parameters of pre and post-irradiated silicon bipolar junction transistor (Si BJT) were extracted with the use of Altium Designer (AD)/SPICE model wizard. The percentage changes ( %) between forward and reverse-bias parameters of existing BJT (ZETEX BCW72) SPICE model were estimated and also the degradation % between the experimental data of pre and post-irradiated Si BJT were calculated. Then the new measured results by comparison were imported into AD/SPICE model wizard to extracts forward-bias parameters. The extracted forward-bias parameters were used to generate reverse-bias parameters through %. The final extracted Si BJT SPICE model parameters were implemented in SPICE simulator to obtained forward and reverse Gummel plots. As expected, base current (I B ) increases, the collector current (I C ) increases slightly at low bias base-emitter voltage, leading to current gain degradation due to positive charge trapped in the oxide and interface of the BJT device. In addition, the results of the I B in the forward Gummel flows in parallel with base-emitter junction, while the I B in the reverse Gummel flows across the base-collector junction down to the back side collector contact through the collector region. Finally, the compared results of Si BJT forward Gummel simulation and experimental data showed good agreement.

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The reconfigurable radiation-hardened differential difference operational amplifier and its main connection circuits in sensor systems

Prokopenko

Dvornikov²,

Butyrlagin

et al. 2015

2015 IEEE East-West Design &Amp; Test Symposium (EWDTS)

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SPICE model parameters extraction taking into account the ionizing radiation effects

Cited by 3 publications

References 7 publications

Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation

Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation

Extraction and Analysis of Gamma Irradiated Si BJT SPICE Model

The reconfigurable radiation-hardened differential difference operational amplifier and its main connection circuits in sensor systems

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