Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

Abstract

The synergistic effect of total ionizing dose (TID) on single event effect (SEE) in SiGe heterojunction bipolar transistor (HBT) is investigated in a series of experiments. The SiGe HBTs after being exposed to 60 Co γ irradiation are struck by pulsed laser to simulate SEE. The SEE transient currents and collected charges of the un-irradiated device are compared with those of the devices which are irradiated at high and low dose rate with various biases. The results show that the SEE damage to un-irradiated device is more serious than that to irradiated SiGe HBT at a low applied voltage of laser test. In addition, the γ irradiations at forward and all-grounded bias have an obvious influence on SEE in the SiGe HBT, but the synergistic effect after cutting off the γ irradiation is not significant. The influence of positive oxide-trap charges induced by TID on the distortion of electric field in SEE is the major factor of the synergistic effect. Moreover, the recombination of interface traps also plays a role in charge collection.

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

“…In order to make the device run as close as possible to the actual radiation environment, it is important to study the effects of 60 Co γ and proton irradiation on the device. [31,32] Thus, in order to simulate real-life conditions that devices may encounter when operating in space radiation environments, investigations are performed by using both the Northwest Institute of Nuclear Technology 60 Co γ radiation source and XiPAF.…”

“…[34] Moreover, during 60 Co γ radiation, an electric field pointing from collector to base is formed at the B/C junction by the cut-off bias so that the ionized holes transit towards the base side in the LOCOS (Location Oxidation of Silicon) and generate stable positive oxide-trap charges near the base, forming space electric field. While the SEE of the SiGe HBT device is studied by using 100-MeV proton, this space electric field whose direction is from base to collector diminishes the applied voltage of V C = 5 V. [31] Thereby, this is also the main reason why the peak value of the collector transient current decreases with the cumulation dose increasing.…”

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

“…Therefore, lasers of different wavelengths (1064 nm and 532 nm) and incident energy were used to study the collector transient current peak, cur-rent duration and charge collection under different applied bias conditions. [11,12] Finally, the equivalent linear energy transfer (LET) value relationship between the pulsed laser and the heavy ions was established by carrying out technology computer-aided design (TCAD) simulations. The single event transient induced by heavy-ion incidence was also studied.…”

“…A model PL2210 picosecond laser with a pulse width of 21.8 ps, a lens with a numerical aperture of 0.7 and an oscilloscope with a bandwidth of 12.5 GHz and sample rate of 50 gigasamples•s −1 were used. [11] The laser can provide infrared light with a photon energy of 1.17 eV (wavelength 1064 nm) and a frequency-doubled green light component of 2.32 eV (wavelength 532 nm) [7] , both of which are Gaussian beams. The incident depths of the 1064 nm and 532 nm wavelength lasers were about 500 µm and 2 µm, respectively.…”

Single event transient of SOI FinFET with total ionizing dose irradiation

“…Although silicon-on-insulator (SOI) technology is helpful for improving the tolerance of devices to SET, the sensitivity of SOI device to TID is also serious due to the existence of oxide insulator [7][8][9]. Therefore, electronics devices for space environments experience TID and SET simultaneously [10][11][12][13]. Some simulation and experimental results have indicated that the SET pulse width and the sensitive area decrease due to heavy-ion induced dose for the IBM 180nm process [10].…”