Single event transient of SOI FinFET with total ionizing dose irradiation

Abstract

Total ionizing dose (TID) irradiation impacts the device leakage currents or threshold voltage, which affects the single event transient (SET) vulnerability of electronics under radiation environment. SET response of SOI FinFET at 14 nm technology node after TID exposure is carried out at different dose level. Results show that the drain current peak presents a slight fluctuant with total dose, while the collected charge and the bipolar amplification coefficient first decrease with total dose and then increase. The potential reason is also discussed from competing mechanisms associated with decreasing threshold voltage from TID irradiation and increasing the drain diffuse current from the potential of the channel.